scholarly journals Erratum: “Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors” [J. Appl. Phys. 86, 4600 (1999)]

2000 ◽  
Vol 87 (3) ◽  
pp. 1588-1588 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
M. Miyasaka ◽  
F. V. Farmakis ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Structural And Electrical Properties

Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 474-481 ◽  
Author(s):  
Ichirou Asai ◽  
Noriji Kato ◽  
Mario Fuse ◽  
Toshihisa Hamano
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
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