Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions

1990 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.


Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.


2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  

1992 ◽  
Vol 14 (4) ◽  
pp. 398-400 ◽  
Author(s):  
D.M. Zayachuk ◽  
V.I. Garasim ◽  
V.A. Shenderovskii
Keyword(s):  

1980 ◽  
Vol 29 (3) ◽  
pp. 409-525 ◽  
Author(s):  
M. Jaros
Keyword(s):  

1968 ◽  
Vol 13 (9) ◽  
pp. 295-297 ◽  
Author(s):  
R. G. Hunsperger ◽  
O. J. Marsh ◽  
C. A. Mead
Keyword(s):  

2003 ◽  
Vol 32 (3) ◽  
pp. 172-175
Author(s):  
Takenori Tanno ◽  
Ken Suto ◽  
Yutaka Oyama ◽  
Jun-Ichi Nishizawa

1999 ◽  
Vol 86 (9) ◽  
pp. 5305-5307 ◽  
Author(s):  
J. Krustok ◽  
J. Raudoja ◽  
M. Yakushev ◽  
R. D. Pilkington ◽  
H. Collan

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