Stacking fault pyramid formation and energetics in silicon‐on‐insulator material formed by multiple cycles of oxygen implantation and annealing

1993 ◽  
Vol 63 (24) ◽  
pp. 3330-3332 ◽  
Author(s):  
J. D. Lee ◽  
J. C. Park ◽  
D. Venables ◽  
S. J. Krause ◽  
P. Roitman
Keyword(s):  
Stacking Fault ◽  
Silicon On Insulator ◽  
Oxygen Implantation ◽  
Multiple Cycles

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

Silicon‐on‐insulator by oxygen implantation with a stationary beam

1985 ◽  
Vol 46 (9) ◽  
pp. 862-864 ◽  
Author(s):  
A. Mogro‐Campero ◽  
R. P. Love ◽  
N. Lewis ◽  
E. L. Hall
Keyword(s):  
Silicon On Insulator ◽  
Oxygen Implantation

Reduced defect density in silicon‐on‐insulator structures formed by oxygen implantation in two steps

1989 ◽  
Vol 54 (6) ◽  
pp. 526-528 ◽  
Author(s):  
J. Margail ◽  
J. Stoemenos ◽  
C. Jaussaud ◽  
M. Bruel
Keyword(s):  
Defect Density ◽  
Silicon On Insulator ◽  
Oxygen Implantation

Dielectrically isolated silicon‐on‐insulator islands by masked oxygen implantation

1987 ◽  
Vol 51 (18) ◽  
pp. 1419-1421 ◽  
Author(s):  
J. R. Davis ◽  
A. Robinson ◽  
K. J. Reeson ◽  
P. L. F. Hemment
Keyword(s):  
Silicon On Insulator ◽  
Oxygen Implantation

Low‐temperature properties and phototransport in silicon‐on‐insulator films synthesized by oxygen implantation

1988 ◽  
Vol 63 (9) ◽  
pp. 4575-4579 ◽  
Author(s):  
George Papaioannou ◽  
Sorin Cristoloveanu ◽  
Peter Hemment
Keyword(s):  
Low Temperature ◽  
Silicon On Insulator ◽  
Oxygen Implantation

Characterization of the silicon‐on‐insulator material formed by high‐dose oxygen implantation using spectroscopic ellipsometry

1987 ◽  
Vol 62 (8) ◽  
pp. 3458-3461 ◽  
Author(s):  
F. Ferrieu ◽  
D. P. Vu ◽  
C. D’Anterroches ◽  
J. C. Oberlin ◽  
S. Maillet ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation
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