Reduced defect density in silicon‐on‐insulator structures formed by oxygen implantation in two steps

1989 ◽  
Vol 54 (6) ◽  
pp. 526-528 ◽  
Author(s):  
J. Margail ◽  
J. Stoemenos ◽  
C. Jaussaud ◽  
M. Bruel
Keyword(s):  
Defect Density ◽  
Silicon On Insulator ◽  
Oxygen Implantation

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

Crystal-Axis-Rotation of Laser-Recrystallized Silicon on Insulator

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Sugahara ◽  
T. Ippóshi ◽  
Y. Inoue ◽  
T. Nishimura ◽  
Y. Akasaka
Keyword(s):  
Thermal Conductivity ◽  
Laser Power ◽  
Rotation Angle ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Bottom Surface ◽  
Crystal Axis ◽  
Scan Speed ◽  
The Difference ◽  
Axis Rotation

AbstractThe relation between the seed pitch and defect density of the laserrecrystallized SOI film was investigated. It was found that the defect density of the SOI increases as the seed pitch increases. The dependences of the laser scan speed and laser power on rotation angle of the SOI film were experimentally and numerically investigated. The crystal-axisrotation of the SOI film was considered to be due to the difference of the temperature between the top and bottom surface of the SOI film near the liquid-solid interface. A polysilicon heat sink structure with high thermal conductivity was newly proposed and was found to reduce the rotation in a small angle.

Silicon‐on‐insulator by oxygen implantation with a stationary beam

1985 ◽  
Vol 46 (9) ◽  
pp. 862-864 ◽  
Author(s):  
A. Mogro‐Campero ◽  
R. P. Love ◽  
N. Lewis ◽  
E. L. Hall
Keyword(s):  
Silicon On Insulator ◽  
Oxygen Implantation

Dielectrically isolated silicon‐on‐insulator islands by masked oxygen implantation

1987 ◽  
Vol 51 (18) ◽  
pp. 1419-1421 ◽  
Author(s):  
J. R. Davis ◽  
A. Robinson ◽  
K. J. Reeson ◽  
P. L. F. Hemment
Keyword(s):  
Silicon On Insulator ◽  
Oxygen Implantation

Monocrystalline Si Films from Transfer Processes for Thin Film Devices

2001 ◽  
Vol 685 ◽  
Author(s):  
Ralf B. Bergmann ◽  
Christopher Berge ◽  
Titus J. Rinke ◽  
Jürgen H. Werner
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Active Matrix ◽  
Plastic Substrates ◽  
Light Point ◽  
Single Host ◽  
Active Matrix Displays ◽  
Si Films

AbstractThe transfer of thin monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of monocrystalline Si films on foreign substrates based on the formation ofquasi-monocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.

Low‐temperature properties and phototransport in silicon‐on‐insulator films synthesized by oxygen implantation

1988 ◽  
Vol 63 (9) ◽  
pp. 4575-4579 ◽  
Author(s):  
George Papaioannou ◽  
Sorin Cristoloveanu ◽  
Peter Hemment
Keyword(s):  
Low Temperature ◽  
Silicon On Insulator ◽  
Oxygen Implantation

Characterization of the silicon‐on‐insulator material formed by high‐dose oxygen implantation using spectroscopic ellipsometry

1987 ◽  
Vol 62 (8) ◽  
pp. 3458-3461 ◽  
Author(s):  
F. Ferrieu ◽  
D. P. Vu ◽  
C. D’Anterroches ◽  
J. C. Oberlin ◽  
S. Maillet ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation
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