High resolution transmission electron microscopy of silicon‐on‐insulator formed by high dose oxygen implantation

1987 ◽  
Vol 50 (3) ◽  
pp. 152-154 ◽  
Author(s):  
Peng‐Heng Chang ◽  
Bor‐Yen Mao
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Transmission Electron

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Formation of Silicon on Insulator Structures By Implanted Nitrogen

1985 ◽  
Vol 53 ◽  
Author(s):  
L. Nesbit ◽  
S. Stiffler ◽  
G. Slusser ◽  
H. Vinton
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mass Spectroscopy ◽  
Silicon Wafers ◽  
Silicon On Insulator ◽  
High Dose ◽  
Secondary Ion Mass Spectroscopy ◽  
Transmission Electron ◽  
Final Microstructure ◽  
Secondary Ion

ABSTRACTThe formation of a silicon-on-insulator (SOI) structure by implanting a high dose of N+ ions to form a buried Si3N4 layer is studied by transmission electron microscopy (TEM) and by secondary ion mass spectroscopy (SIMS). The SOI structure is formed by implanting silicon wafers with 7.5x1017 N+ ions/cm2 at 160 keV and at wafer temperatures of 400, 500, or 600°C. The implanted wafers are subsequently annealed at 1200°C for times ranging from 10 minutes to 2 hours. The microstructures and nitrogen distributions of the asimplanted and post-annealed wafers are examined in order to elucidate the development of the final microstructure.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Improved quantification of curvature in high-resolution transmission electron microscopy lattice fringe micrographs of soots

Carbon ◽  
2017 ◽  
Vol 117 ◽  
pp. 174-181 ◽  
Author(s):  
Chang’an Wang ◽  
Thomas Huddle ◽  
Chung-Hsuan Huang ◽  
Wenbo Zhu ◽  
Randy L. Vander Wal ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Fringe ◽  
Transmission Electron
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