Electron spin resonance of defects in silicon‐on‐insulator structures formed by oxygen implantation: Influence of γ irradiation

1991 ◽  
Vol 69 (1) ◽  
pp. 175-181 ◽  
Author(s):  
A. Stesmans ◽  
A. G. Revesz ◽  
H. L. Hughes
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Silicon On Insulator ◽  
Γ Irradiation ◽  
Oxygen Implantation ◽  
Spin Resonance

Electron spin resonance study of γ-irradiated tetraethylammonium iodide

1968 ◽  
Vol 46 (16) ◽  
pp. 2749-2752 ◽  
Author(s):  
L. Fabes ◽  
J. K. S. Wan
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Secondary Reaction ◽  
Electron Spin Resonance Study ◽  
Methyl Radicals ◽  
Γ Irradiation ◽  
Spin Resonance ◽  
Secondary Radical ◽  
Tetraethylammonium Iodide ◽  
Spin Resonance Study

γ-Irradiation of polycrystalline tetraethylammonium iodide at 77°K leads to the breaking of a C—C bond and the primary radicals ĊH3 and [Formula: see text] were detected by electron spin resonance. The methyl radicals were found to disappear readily at 120°K. In the range of 263–273°K a secondary reaction between [Formula: see text] and the parent ion [Formula: see text] was observed; the resulting secondary radical [Formula: see text] was found to be stable up to 373°K.

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