Electron mobility and Si incorporation in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy

M. J. Ekenstedt; P. Songpongs; T. G. Andersson

doi:10.1063/1.107799

Electron mobility and Si incorporation in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.107799 ◽

1992 ◽

Vol 61 (7) ◽

pp. 789-791 ◽

Cited By ~ 8

Author(s):

M. J. Ekenstedt ◽

P. Songpongs ◽

T. G. Andersson

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1807023 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4043-4045 ◽

Cited By ~ 6

Author(s):

T. Kitada ◽

T. Aoki ◽

I. Watanabe ◽

S. Shimomura ◽

S. Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Inp Substrates

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Cited By ~ 43

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Cited By ~ 7

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

High Electron Mobility Transistor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

High Electron Mobility

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High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.01.035 ◽

2004 ◽

Vol 265 (1-2) ◽

pp. 34-40 ◽

Cited By ~ 68

Author(s):

Kazuhiro Miyamoto ◽

Michihiro Sano ◽

Hiroyuki Kato ◽

Takafumi Yao

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility

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Electron mobility in HgCdTe near the zero-band-gap grown by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90748-8 ◽

1992 ◽

Vol 117 (1-4) ◽

pp. 218-221 ◽

Cited By ~ 6

Author(s):

S. Sone ◽

N. Oda ◽

T. Sasaki ◽

M. Kawano

Keyword(s):

Molecular Beam Epitaxy ◽

Band Gap ◽

Electron Mobility ◽

Molecular Beam

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Cited By ~ 39

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Cited By ~ 3

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Interface roughness characterization by electron mobility of pseudomorphic In[sub 0.74]Ga[sub 0.26]As∕In[sub 0.52]Al[sub 0.48]As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1868713 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1154 ◽

Cited By ~ 4

Author(s):

S. Katoh ◽

H. Sagisaka ◽

M. Yamamoto ◽

I. Watanabe ◽

T. Kitada ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

Interface Roughness ◽

Inp Substrates

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Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

MRS Proceedings ◽

10.1557/opl.2013.821 ◽

2013 ◽

Vol 1561 ◽

Cited By ~ 2

Author(s):

Cheng-Ying Huang ◽

Jeremy J. M. Law ◽

Hong Lu ◽

Mark J. W. Rodwell ◽

Arthur C. Gossard

Keyword(s):

Molecular Beam Epitaxy ◽

Carrier Concentration ◽

Electron Mobility ◽

Molecular Beam ◽

Epitaxial Layers ◽

Barrier Material ◽

Double Heterostructures ◽

Thin Channel ◽

Si Doped ◽

Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

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