Investigation of effect of strain on low-threshold 1.3 µm InGaAsP strained-layer quantum well lasers

1994 ◽  
Vol 30 (10) ◽  
pp. 788-789 ◽  
Author(s):  
T. Tsuchiya ◽  
M. Komori ◽  
K. Uomi ◽  
A. Oka ◽  
T. Kawano ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Low Threshold

Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

1994 ◽  
Vol 6 (10) ◽  
pp. 1165-1166 ◽  
Author(s):  
T. Yamamoto ◽  
T. Watanabe ◽  
S. Ide ◽  
I. Tanaka ◽  
H. Nobuhara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Modulation Doping ◽  
Strained Layer ◽  
Low Threshold

Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)

1989 ◽  
Vol 54 (10) ◽  
pp. 913-915 ◽  
Author(s):  
J. S. Major ◽  
L. J. Guido ◽  
K. C. Hsieh ◽  
N. Holonyak ◽  
W. Stutius ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
Low Threshold
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