Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy
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1994 ◽
Vol 7
(3)
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pp. 139-143
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1997 ◽
Vol 9
(9)
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pp. 1205-1207
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1994 ◽
Vol 30
(2)
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pp. 424-440
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