Identification of segregation from borophosphosilicate glass films during annealing

1992 ◽  
Vol 60 (22) ◽  
pp. 2761-2763 ◽  
Author(s):  
S. Imai ◽  
Y. Yabuuchi ◽  
Y. Terai ◽  
T. Yasui ◽  
C. Kudo ◽  
...  
Keyword(s):  
Borophosphosilicate Glass ◽  
Glass Films

Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

1994 ◽  
Vol 65 (10) ◽  
pp. 1236-1238 ◽  
Author(s):  
R. Ossikovski ◽  
N. Blayo ◽  
B. Drévillon ◽  
M. Firon ◽  
B. Delahaye ◽  
...  
Keyword(s):  
Infrared Ellipsometry ◽  
Borophosphosilicate Glass ◽  
Glass Films

Stability of Diborane Mixtures Used for Borophosphosilicate Glass Films

1993 ◽  
Vol 140 (6) ◽  
pp. 1709-1713 ◽  
Author(s):  
Edward T. Flaherty ◽  
Jeff Marshall ◽  
Pamela Albert ◽  
Ann Marie Brzychcy ◽  
Delya Forbes ◽  
...  
Keyword(s):  
Borophosphosilicate Glass ◽  
Glass Films

The Deposition of Borophosphosilicate Glass Films by LPCVD Using 2,4,6,8 Tetramethylcyclotetrasiloxane

1990 ◽  
Vol 204 ◽  
Author(s):  
David L. O'Meara ◽  
Arthur K. Hochberg
Keyword(s):  
Integrated Circuit ◽  
Silicon Oxide ◽  
Chemical System ◽  
Safe Alternative ◽  
Liquid Source ◽  
Borophosphosilicate Glass ◽  
Reduced Pressures ◽  
Glass Films ◽  
Integrated Circuit Processing

ABSTRACTBorophosphosilicate glass (BPSG) films used in integrated circuit processing are grown from combinations of toxic and pyrophoric silane, diborane, and phosphine at atmospheric and reduced pressures. A safe, alternative chemical system has been developed with liquid source replacements for each dangerous gas. 2,4,6,8 tetramethylcyclotetrasiloxane (TMCTS) and oxygen are used as the silicon oxide sources, and trimethylphosphite (TMP) and trimethylborate (TMB) are the phosphorous and boron sources, respectively. Films grown in a hot wall LPCVD reactor with standard diffusion boats have thickness uniformities of ± 2 % and doping uniformities < ± 5 %.

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