A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O

1991 ◽  
Vol 59 (13) ◽  
pp. 1581-1582 ◽  
Author(s):  
Hyunsang Hwang ◽  
Wenchi Ting ◽  
Dim‐Lee Kwong ◽  
Jack Lee
Keyword(s):  
Physical Model ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Boron Penetration

Rapid Thermal Processes for Future Nanometer MOS Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
John R. Hauser
Keyword(s):  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Dielectric Materials ◽  
Nanometer Scale ◽  
Thermal Processes ◽  
Contact Material ◽  
Mos Devices ◽  
Front End ◽  
Projected Changes

ABSTRACTScaling of MOS devices is projected to continue down to device dimensions of at least 50 nm. However, there are many potential roadblocks to achieving such dimensions and many standard materials and front-end processes which must be significantly changed to achieve these goals. The most important areas for change include (a) gate dielectric materials, (b) gate contact material, (c) source/drain contacting structure and (d) fundamental bulk CMOS structure. These projected changes are reviewed along with possible applications of rapid thermal processing to achieving future nanometer scale MOS devices.

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

2001 ◽  
Vol 08 (05) ◽  
pp. 569-573
Author(s):  
R. LIU ◽  
K. H. KOA ◽  
A. T. S. WEE ◽  
W. H. LAI ◽  
M. F. LI ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Dielectric ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Secondary Ion

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

Rapid Thermal Processing of Gate Dielectric Films and their Characterization

1987 ◽  
Vol 92 ◽  
Author(s):  
D. L. Flowers ◽  
J. Nulman ◽  
J. P. Krusius
Keyword(s):  
Integrated Circuits ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Defect Density ◽  
Rapid Thermal Processing ◽  
Dielectric Films ◽  
Mobile Charge ◽  
High Quality ◽  
Temperature Constraint ◽  
Low Levels

ABSTRACTRapid thermal processing has been used to grow high quality, low defect density, low mobile charge, dielectric films of oxide and nitrided oxide. Suitable annealing can lower the fixed charge and interfacial trap density present in these filmsto acceptably low levels. Both RTA and RTN were shown to improve the dielectric properties of the grown oxides. These filmsshould be strong candidates for use in high density, shallow junction, integrated circuits where a minimal time/temperature constraint is imposed on further processing after diffusion.

Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO2 Structures by A 900°C 30 Second Rapid Thermal Anneal

1997 ◽  
Vol 470 ◽  
Author(s):  
G. Lucovsky ◽  
B. Hinds
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Rapid Thermal Anneal ◽  
Thermal Budget ◽  
Kinetic Effects ◽  
C 30 ◽  
Thin Gate Oxide ◽  
Low Thermal Budget

ABSTRACTDevice quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.

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