scholarly journals Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

2006 ◽  
Vol 88 (8) ◽  
pp. 082114 ◽  
Author(s):  
A. Armstrong ◽  
C. Poblenz ◽  
D. S. Green ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu

1996 ◽  
Vol 68 (6) ◽  
pp. 841-843 ◽  
Author(s):  
C. H. Goo ◽  
W. S. Lau ◽  
T. C. Chong ◽  
L. S. Tan ◽  
Paul K. Chu

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