Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2

1991 ◽  
Vol 59 (6) ◽  
pp. 653-655 ◽  
Author(s):  
T. Noma ◽  
T. Yonehara ◽  
H. Kumomi
Keyword(s):  
Solid State ◽  
Crystal Forms ◽  
Amorphous Si ◽  
Si Films ◽  
Solid State Recrystallization

Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

1992 ◽  
Vol 280 ◽  
Author(s):  
Y. W. Kim ◽  
I. K. Kim ◽  
N. I. Lee ◽  
J. W. Ko ◽  
S. T. Ahn ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Solid State ◽  
Surface Energy ◽  
Microstructural Evolution ◽  
Solid State Reaction ◽  
Crystallographic Orientation ◽  
Amorphous Si ◽  
Si Films ◽  
Thermal Stability Of

ABSTRACTThe effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various temperatures. The TiSi2 film was formed by the solid-state reaction of the Ti film sputtered on the poly-Si film. The thermal stability of the TiSi2 film was evaluated by changes in the sheet resistance and microstructural evolution during furnace anneals. The TiSi2 film on poly-Si with the <110> preferred orientation shows more stable conductivity during high temperature anneals than with the <111> orientation. The surface energy of underlying poly-Si is expected to influence the thermal stability of the TiSi2/poly-Si structure significantly. Better thermal stability of the TiSi2 film can be obtained by the higher surface energy of underlying poly-Si.

Manipulation of Nucleation Sites in Solid-State Crystallization of Amorphous Si Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Hideya Kumomi ◽  
Takao Yonehara
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Size Distribution ◽  
Narrow Size Distribution ◽  
Amorphous Films ◽  
Nucleation Sites ◽  
Preferential Nucleation ◽  
Amorphous Si ◽  
Si Films ◽  
Si Ion Implantation

ABSTRACTNucleation sites are manipulated in amorphous Si films to control grain location and the size distribution during the solid-state crystallization. The principle of the method is theoretically investigated. Nucleation is suppressed and the sites are periodically formed in the plane of amorphous films by 2-step Si ion implantation. Thermal annealing causes preferential nucleation of single nuclei at the artificial sites and they grow laterally in the film. Consequently, 3 μm large grains were arranged in a matrix with a narrow size distribution.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Low‐Temperature Activation and Recrystallization of B+‐ and  BF 2  +  ‐ Implanted LPCVD Amorphous‐Si Films

1995 ◽  
Vol 142 (10) ◽  
pp. 3574-3578 ◽  
Author(s):  
Huang‐Chung Cheng ◽  
Fang‐Shing Wang ◽  
Yeong‐Fang Huang ◽  
Chun‐Yao Huang ◽  
Meng‐Jin Tsai
Keyword(s):  
Low Temperature ◽  
Amorphous Si ◽  
Temperature Activation ◽  
Si Films

Fabrication of amorphous Si and C anode films via co-sputtering for an all-solid-state battery

2014 ◽  
Vol 564 ◽  
pp. 58-64 ◽  
Author(s):  
K.S. Lee ◽  
S.H. Lee ◽  
S.P. Woo ◽  
H.S. Kim ◽  
Y.S. Yoon
Keyword(s):  
Solid State ◽  
Solid State Battery ◽  
Amorphous Si ◽  
Anode Films

Suppression of Crystal Nucleation in Amorphous Si Thin Films by High Energy Ion Irradiation at Intermediate Temperatures

1990 ◽  
Vol 201 ◽  
Author(s):  
James S. Im ◽  
Jung H. Shin ◽  
Harry A. Atwater
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Intermediate Temperature ◽  
Crystal Nucleation ◽  
Potential Applications ◽  
Annealing Cycle ◽  
Amorphous Si ◽  
Si Films ◽  
Device Technology

AbstractIn situ electron microscopy has been used to observe crystal nucleation and growth in amorphous Si films. Results demonstrate that a repeated intermediate temperature ion irradiation/thermal annealing cycle can lead to suppression of nucleation in amorphous regions without inhibition of crystal growth of existing large crystals. Fundamentally, the experimental results indicate that the population of small crystal clusters near the critical cluster size is affected by intermediate temperature ion irradiation. Potential applications of the intermediate temperature irradiation/thermal anneal cycle to lateral solid epitaxy of Si and thin film device technology are discussed.

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