Formation of silicided shallow p[sup +]n junctions by BF[sub 2][sup +] implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation

1999 ◽  
Vol 17 (2) ◽  
pp. 392
Author(s):  
M. H. Juang ◽  
M. C. Hu ◽  
C. J. Yang
Keyword(s):  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Porous Amorphous Si Formation by the Etching of Single Crystal Si Substrates

1992 ◽  
Vol 259 ◽  
Author(s):  
T. George ◽  
R. P. Vasquez ◽  
S. S. Kim ◽  
R.W. Fathauer ◽  
W. T. Pike
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Amorphous Si ◽  
Si Films ◽  
P Type ◽  
Stain Etching

ABSTRACTThe nature of light-emitting porous Si layers produced by non-anodic stain etching of p-type (100) Si substrates is studied. The layers were characterized by transmission electron microscopy as being amorphous in nature. X-ray photoelectron spectroscopy and electron spin resonance measurements show these layers to be composed mainly of a-Si. The formation mechanism of the a-Si is explored using by stain etching SiGe ‘marker’ layers within epitaxially grown Si films and by high temperature annealing. These experiments provide strong evidence for a spontaneous crystalline-amorphous phase transformation during the etching process.

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates

1986 ◽  
Vol 48 (12) ◽  
pp. 773-775 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Computer simulation of thin amorphous Si films on crystalline Si substrates

1987 ◽  
Vol 94 (1) ◽  
pp. 28-35 ◽  
Author(s):  
Ş. Erkoç ◽  
T. Halicioglu ◽  
W.A. Tiller
Keyword(s):  
Computer Simulation ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of Si

1985 ◽  
Vol 53 ◽  
Author(s):  
Masayoshi Sasaki ◽  
Hiroshi Onoda ◽  
Norio Hirashita
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
High Energy ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Segregation Effect ◽  
Order Of Magnitude ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films

ABSTRACTEpitaxial Si films have been grown on single crystalline CaF2 on (l00)Si substrates by molecular beam epitaxy(MBE) or combination of MBE and solid phase epitaxy(SPE) of deposited amorphous Si(a-Si). It has been found that Ca and F segregate at the surface of the Si grown by MBE. The high energy electron diffraction (RHEED) patterns from the Si surface show the superstructures which are caused by the existence of Ca and F at the Si surface. To reduce the segregation effect, SPE process has been successfully applied to Si epitaxy. The Si SPE performed on top of the MBE Si layer reduces the Ca concentration at the Si surface by an order of magnitude, although the segregation effect is not completely suppressed.

Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns

1983 ◽  
Vol 43 (11) ◽  
pp. 1028-1030 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa ◽  
Masao Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Role of grain boundaries in the epitaxial realignment of undoped and As-doped polycrystalline silicon films

1993 ◽  
Vol 8 (10) ◽  
pp. 2608-2612 ◽  
Author(s):  
C. Spinella ◽  
F. Benyaïch ◽  
A. Cacciato ◽  
E. Rimini ◽  
G. Fallico ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Grain Structure ◽  
Native Oxide ◽  
Thermally Induced ◽  
Si Substrates ◽  
As Doping ◽  
Fine Grain ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Reduced Density

The early stages of the thermally induced epitaxial realignment of undoped and As-doped polycrystalline Si films deposited onto crystalline Si substrates were monitored by transmission electron microscopy. Under the effect of the heat treatment, the native oxide film at the poly-Si/c-Si interface begins to agglomerate into spherical beads. The grain boundary terminations at the interface are the preferred sites for the triggering of the realignment transformation which starts by the formation of epitaxial protuberances at these sites. This feature, in conjunction with the microstructure of the films during the first instants of the heat treatment, explains the occurrence of two different realignment modes. In undoped films the epitaxial protuberances, due to the fine grain structure, are closely distributed and grow together forming a rough interface moving toward the film's surface. For As-doped films, the larger grain size leaves a reduced density of realignment sites. Due to As doping some of these sites grow fast and form epitaxial columns that further grow laterally at the expense of the surrounding polycrystalline grains.

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