Low‐Temperature Activation and Recrystallization of B+‐ and  BF 2  +  ‐ Implanted LPCVD Amorphous‐Si Films

1995 ◽  
Vol 142 (10) ◽  
pp. 3574-3578 ◽  
Author(s):  
Huang‐Chung Cheng ◽  
Fang‐Shing Wang ◽  
Yeong‐Fang Huang ◽  
Chun‐Yao Huang ◽  
Meng‐Jin Tsai
Keyword(s):  
Low Temperature ◽  
Amorphous Si ◽  
Temperature Activation ◽  
Si Films

Low-temperature activation method of poly-Si films using rapid thermal annealing

1997 ◽  
Author(s):  
Kiichi Hirano ◽  
Naoya Sotani ◽  
Isao Hasegawa ◽  
Tomoyuki Nohda ◽  
Hisashi Abe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Activation Method ◽  
Temperature Activation ◽  
Si Films

Enhanced Low-Temperature Crystallization of Amorphous Si Films Using AlCl3 Vapor

2001 ◽  
Vol 685 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Byung Tae Ahn
Keyword(s):  
Detection Limit ◽  
Low Temperature ◽  
Rough Surface ◽  
Direct Contact ◽  
Metal Film ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

AbstractIt is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.

Study of low-temperature crystallization of amorphous Si films obtained using ferritin with Ni nanoparticles

2005 ◽  
Vol 86 (26) ◽  
pp. 262106 ◽  
Author(s):  
Hiroya Kirimura ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
Keyword(s):  
Low Temperature ◽  
Ni Nanoparticles ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

Stress Effects on Nanocrystal Formation by Ni-Induced Crystallization of Amorphous Si

2003 ◽  
Vol 762 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
Mahmooda Sultana ◽  
James D. Plummer
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Crystallization Rate ◽  
Chemical Vapor ◽  
Sputtering Deposition ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractMetal-induced crystallization (MIC) of amorphous Si is gaining increased interest because of its potential use for low-temperature fabrication of integrated circuits. In this work, the MIC technique was used to make Si nanocrystals and the effects of stress on the crystallization were studied. Amorphous Si films were deposited onto the Si substrate with thermal oxides on top by low-pressure chemical vapor deposition (LPCVD) and then patterned into nanoscale pillars by electron beam lithography and reactive ion etching. A conformal low-temperature oxide (LTO) layer was deposited to cover the pillars, followed by an anisotropic etch back to form a spacer, leaving only the top surface of the pillars exposed to the 5 nm Ni sputtering deposition afterwards. An HF dip was used to partially remove the LTO spacers on the pillars, leading to different LTO thicknesses on different samples. These samples were then annealed to crystallize the amorphous Si pillars, forming Si nanocrystals. Transmission electron microscope (TEM) observations after anneal found a clear dependence of the crystallization rate on the pillar size as well as the LTO thickness. The crystallization rate was lower for pillars with thicker LTO spacers, while for the same LTO thickness the crystallization rate was lower for pillars with narrower width. A model based on the stress in the pillars is proposed to explain this dependence. This model suggests some methods to control the nickel-induced crystallization process and achieve higher quality Si nanocrystals.

Low-Temperature Crystallization of Amorphous Si Films Using Ferritin Protein with Ni Nanoparticles

2019 ◽  
Vol 3 (8) ◽  
pp. 195-201
Author(s):  
Y. Uraoka ◽  
Hiroya Kirimura ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
Keyword(s):  
Low Temperature ◽  
Ni Nanoparticles ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

Low-temperature crystallization of amorphous Si films using AlCl3 vapor

2002 ◽  
Vol 74 (1-4) ◽  
pp. 315-321 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Kyung Hoon Yoon ◽  
Byung Tae Ahn
Keyword(s):  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

Low-Temperature Crystallization of Amorphous Si Films by Metal Adsorption and Diffusion

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1005-1009 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Jeong No Lee ◽  
Sang Won Kang ◽  
Byung Tae Ahn
Keyword(s):  
Low Temperature ◽  
Metal Adsorption ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
And Diffusion ◽  
Temperature Crystallization

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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