Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate

1991 ◽  
Vol 59 (12) ◽  
pp. 1440-1442 ◽  
Author(s):  
P. C. Colter ◽  
S. A. Hussien ◽  
A. Dip ◽  
M. U. Erdoǧan ◽  
W. M. Duncan ◽  
...  
Keyword(s):  
Growth Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Atomie Layer Epitaxy ia a Rotating Disk Reactor

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Liu ◽  
P. A. Zawadzki ◽  
P. E. Norris
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Atomic Layer ◽  
Rotating Disk ◽  
Atomic Layer Epitaxy ◽  
Process Window ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Group Iii ◽  
Reaction Complex

ABSTRACTCurrent difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.

Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy

1996 ◽  
Vol 74 (S1) ◽  
pp. 85-88 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Flows ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of the impinging surface species. This property is used to optimize the growth interruptions for the ALE cycle. Good correlation of the RDS saturation is observed with growth-rate measurements obtained by X-ray diffraction (XRD). When exposure times are sufficiently long for saturation to be observed in the RDS signal, a growth rate of one monolayer per cycle (1 ML/cycle) is achieved. In principle all the different growth parameters such as exposure and purge times as well as gas flows can be determined in a few cycles performed on a single substrate. Without RDS the same results would require several growth runs and time consuming X-ray characterization.

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

Atomic layer epitaxy of GaAs with a 2 μm/h growth rate

1993 ◽  
Vol 62 (19) ◽  
pp. 2378-2380 ◽  
Author(s):  
Anthony Dip ◽  
Gamal M. Eldallal ◽  
Peter C. Colter ◽  
N. Hayafuji ◽  
S. M. Bedair
Keyword(s):  
Growth Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Rheed Measurement and Chemical Kinetics of Chemical Beam Epitaxial growth of GaAs

1989 ◽  
Vol 145 ◽  
Author(s):  
T.H. Chiu
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
High Energy ◽  
Reaction Model ◽  
Atomic Layer Epitaxy ◽  
Dynamic Evolution ◽  
High Energy Electron ◽  
Incident Flux ◽  
Kinetics Of

AbstractRecent efforts employing reflection high energy electron diffiaction measurements to study the chemical beam epitaxial growth of GaAs is reviewed. A reaction model which assumes the dominance of Ga alkyls and their derivatives adsorbed on the growing surface can explain most of the growth results in a consistent way. Dynamic evolution of the reconstruction pattern of the adsorbed triethylgallium or trimethylgallium overlayer illustrates how the alkyl-Ga bonds are cleaved sequentially. The growth rate dependence on temperature and incident flux can be fitted quite well in this reaction model. In the absence of As flux, the existence of a metastable Ga alkyl overlayer makes possible the atomic layer epitaxy of GaAs.

Theoretical evaluation of film growth rate during atomic layer epitaxy

2000 ◽  
Vol 158 (1-2) ◽  
pp. 81-91 ◽  
Author(s):  
Hyung-Sang Park ◽  
Jae-Sik Min ◽  
Jung-Wook Lim ◽  
Sang-Won Kang
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Theoretical Evaluation ◽  
Film Growth Rate

Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films

2000 ◽  
Vol 10 (8) ◽  
pp. 1857-1861 ◽  
Author(s):  
Matti Putkonen ◽  
Timo Sajavaara ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Magnesium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Atomic Layer Epitaxy of GaAs and InAs

1989 ◽  
Vol 145 ◽  
Author(s):  
Weon G. Jeong ◽  
E.P. Menu ◽  
P.D. Dapkus
Keyword(s):  
Growth Rate ◽  
Exposure Time ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Short Exposure ◽  
Physical Size ◽  
A Value ◽  
Decomposition Time

AbstractThe saturation behavior of growth of GaAs and InAs by atomic layer epitaxy is studied. The growth rate is found to be strongly dependent on alkyl exposure time for the same total alkyl exposure per cycle. The longer the exposure time, the higher the saturated growth rate is. For short exposure, the growth rate saturates to a value less than one monolayer (ML)/cycle. Strong saturation of the growth rate to one ML/cycle is achieved for InAs at a growth temperature of 340°C with 3 sec of trimethylindium exposure. For GaAs, saturation of the growth rate to one ML/cycle is achieved at the growth temperature of 400°C with 10 sec of trimethylgallium exposure. At higher growth temperatures, the growth rate does not saturate but increases slowly with increasing exposure. The large physical size and finite decomposition time of the initial adsorbate are suggested as the cause for the dependence of ALE growth rate on alkyl exposure time.

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