Self-limiting growth of ZnS on Si substrates at a growth rate of 0.7 monolayers per operating cycle by atomic layer epitaxy using MOCVD

1997 ◽  
Vol 5 (2) ◽  
pp. 99
Author(s):  
C. H. Liu ◽  
M. Yokoyama ◽  
Y. K. Su ◽  
N. C. Lee
Keyword(s):  
Growth Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Operating Cycle ◽  
Si Substrates

Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate

1991 ◽  
Vol 59 (12) ◽  
pp. 1440-1442 ◽  
Author(s):  
P. C. Colter ◽  
S. A. Hussien ◽  
A. Dip ◽  
M. U. Erdoǧan ◽  
W. M. Duncan ◽  
...  
Keyword(s):  
Growth Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Atomie Layer Epitaxy ia a Rotating Disk Reactor

1991 ◽  
Vol 240 ◽  
Author(s):  
H. Liu ◽  
P. A. Zawadzki ◽  
P. E. Norris
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Atomic Layer ◽  
Rotating Disk ◽  
Atomic Layer Epitaxy ◽  
Process Window ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Group Iii ◽  
Reaction Complex

ABSTRACTCurrent difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.

Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy

1996 ◽  
Vol 74 (S1) ◽  
pp. 85-88 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Flows ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reflectance Difference Spectroscopy

Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of the impinging surface species. This property is used to optimize the growth interruptions for the ALE cycle. Good correlation of the RDS saturation is observed with growth-rate measurements obtained by X-ray diffraction (XRD). When exposure times are sufficiently long for saturation to be observed in the RDS signal, a growth rate of one monolayer per cycle (1 ML/cycle) is achieved. In principle all the different growth parameters such as exposure and purge times as well as gas flows can be determined in a few cycles performed on a single substrate. Without RDS the same results would require several growth runs and time consuming X-ray characterization.

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

Atomic layer epitaxy of GaAs with a 2 μm/h growth rate

1993 ◽  
Vol 62 (19) ◽  
pp. 2378-2380 ◽  
Author(s):  
Anthony Dip ◽  
Gamal M. Eldallal ◽  
Peter C. Colter ◽  
N. Hayafuji ◽  
S. M. Bedair
Keyword(s):  
Growth Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy
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