Rheed Measurement and Chemical Kinetics of Chemical Beam Epitaxial growth of GaAs

1989 ◽  
Vol 145 ◽  
Author(s):  
T.H. Chiu
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
High Energy ◽  
Reaction Model ◽  
Atomic Layer Epitaxy ◽  
Dynamic Evolution ◽  
High Energy Electron ◽  
Incident Flux ◽  
Kinetics Of

AbstractRecent efforts employing reflection high energy electron diffiaction measurements to study the chemical beam epitaxial growth of GaAs is reviewed. A reaction model which assumes the dominance of Ga alkyls and their derivatives adsorbed on the growing surface can explain most of the growth results in a consistent way. Dynamic evolution of the reconstruction pattern of the adsorbed triethylgallium or trimethylgallium overlayer illustrates how the alkyl-Ga bonds are cleaved sequentially. The growth rate dependence on temperature and incident flux can be fitted quite well in this reaction model. In the absence of As flux, the existence of a metastable Ga alkyl overlayer makes possible the atomic layer epitaxy of GaAs.

INTERACTION BETWEEN Zn AND Cd ATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTe QUANTUM WELLS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1725-1728 ◽  
Author(s):  
ERICK M. LARRAMENDI ◽  
EDGAR LÓPEZ-LUNA ◽  
OSVALDO DE MELO ◽  
ISAAC HERNÁNDEZ-CALDERÓN
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
High Energy ◽  
Atomic Layer Epitaxy ◽  
Temporal Behavior ◽  
High Energy Electron ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Znte Film ◽  
Cdte Surface

Layers of 6 and 16 Cd–Te–Zn–Te periods were grown by atomic layer epitaxy (ALE) within ZnTe thin films. Different samples were grown at substrate temperatures of 260 and 290°C. Information about the kinetics of growth and surface reconstruction during the ALE growth of CdTe and ZnTe films, and Cd–Te–Zn–Te periods was obtained by means of reflection high-energy electron diffraction (RHEED) experiments and through the analysis of the temporal behavior of the intensities of several features of the RHEED patterns. The photoluminescence of the sample grown at 260°C presents two narrow and intense peaks corresponding to emission from quantum wells (QWs). However, the spectrum of the samples grown at 290°C does not show any feature associated with QWs, the spectrum resembling that of a ZnTe film. Cd replacement by Zn atoms explains the absence of the CdZnTe QWs at 290°C and a lower Cd content than expected at 260°C. The replacement of Cd atoms by Zn atoms in the CdTe surface was clearly demonstrated by Auger experiments.

Competitive Pairing and the Chemistry of Coadsorbed Hydrogen and Halogens on Ge(100)

1992 ◽  
Vol 282 ◽  
Author(s):  
Yuemei L. Yang ◽  
Stephen M. Cohen ◽  
Mark P. D'Evelyn
Keyword(s):  
Epitaxial Growth ◽  
Atomic Layer ◽  
Temperature Programmed Desorption ◽  
Model System ◽  
Atomic Layer Epitaxy ◽  
Desorption Kinetics ◽  
First Order ◽  
First Order Kinetics ◽  
Temperature Programmed ◽  
Kinetics Of

ABSTRACTThe chemistry of coadsorbed H and X (X=C1, Br) on semiconductor surfaces is important in epitaxial growth of silicon from chlorosilanes and of SixGe1−x alloys, in hydrogenating/ halogenating cycles in atomic layer epitaxy, and also provides an interesting model system, yet has received little attention to date. We have investigated the interaction of HC1 and HBr with Ge(100) by temperature-programmed desorption, and find that H2, HCl and HBr each desorb with near-first-order kinetics near 570–590 K and that GeCl2 and GeBr2 desorb with near-second-order kinetics near 675 K and 710 K, respectively. Analysis of the desorption kinetics of H2 and HX provides evidence that adsorbed H and X atoms pair preferentially in a qualitatively similar way as H atoms adsorbed alone on Ge(100)2×1 or Si(100)2×1 and that pairing of H+X occurs in competition with pairing of H+H.

Sign in / Sign up

Export Citation Format

Share Document