Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films

2000 ◽  
Vol 10 (8) ◽  
pp. 1857-1861 ◽  
Author(s):  
Matti Putkonen ◽  
Timo Sajavaara ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Magnesium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy

1999 ◽  
Vol 9 (10) ◽  
pp. 2449-2452 ◽  
Author(s):  
Matti Putkonen ◽  
Leena-Sisko Johansson ◽  
Eero Rauhala ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Magnesium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Controlled Growth ◽  
Oxide Thin Films

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

2005 ◽  
Vol 11 (10) ◽  
pp. 415-419 ◽  
Author(s):  
J. Päiväsaari ◽  
J. Niinistö ◽  
K. Arstila ◽  
K. Kukli ◽  
M. Putkonen ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

Growth of Indium‐Tin‐Oxide Thin Films by Atomic Layer Epitaxy

1995 ◽  
Vol 142 (10) ◽  
pp. 3538-3541 ◽  
Author(s):  
Timo Asikainen ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films
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