Schottky barrier height variation due to a Mo interfacial layer in W/GaAs systems

1989 ◽  
Vol 65 (11) ◽  
pp. 4324-4332 ◽  
Author(s):  
Shin‐ichi Ohfuji ◽  
Youichi Kuriyama
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Height Variation

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

2011 ◽  
Vol 98 (9) ◽  
pp. 092113 ◽  
Author(s):  
J.-Y. Jason Lin ◽  
Arunanshu M. Roy ◽  
Aneesh Nainani ◽  
Yun Sun ◽  
Krishna C. Saraswat
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Current Density ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Metal Contacts

Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance

2011 ◽  
Vol 98 (17) ◽  
pp. 172106 ◽  
Author(s):  
Ze Yuan ◽  
Aneesh Nainani ◽  
Yun Sun ◽  
J.-Y. Jason Lin ◽  
Piero Pianetta ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Height Reduction ◽  
Tunneling Resistance

Insertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4811-4821 ◽  
Author(s):  
Shan Zheng ◽  
Haichang Lu ◽  
Huan Liu ◽  
Dameng Liu ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Height Reduction

We report an effective approach for reducing the Schottky barrier height (SBH) in the source and drain (S/D) contacts of WS2 field-effect transistors (FETs) using an ultrathin Al2O3 interfacial layer between the metal and WS2.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

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