Sulfur doping behavior of gallium antimonide grown by molecular‐beam epitaxy

1988 ◽  
Vol 63 (2) ◽  
pp. 395-399 ◽  
Author(s):  
I. Poole ◽  
M. E. Lee ◽  
K. E. Singer ◽  
J. E. F. Frost ◽  
T. M. Kerr ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Sulfur Doping ◽  
Doping Behavior

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Growth of Ga-face and N-face GaN films using ZnO Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
E. S. Hellman ◽  
D. N. E. Buchanan ◽  
D. Wiesmann ◽  
I. Brener
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Molecular Beam ◽  
Piezoelectric Coefficient ◽  
Droplet Formation ◽  
Lower Threshold ◽  
Striking Difference ◽  
Doping Behavior ◽  
Image Position

We have used plasma molecular beam epitaxy on (0 0 0 1) and (0 0 0 ) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both Ga and N faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation.

scholarly journals Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

2021 ◽  
Vol 8 ◽  
Author(s):  
Bing Yan ◽  
Hongyu Liang ◽  
Yongfeng Liu ◽  
Weihua Liu ◽  
Wenhui Yuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Mechanical Polishing ◽  
High Quality ◽  
X Ray ◽  
Atomic Force

Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate surface quality. In this study, the chemical mechanical polishing of GaSb wafers is investigated by considering the effects of the polishing pad, polishing solution, polishing time and pH buffer on their surface morphology and roughness. The surface morphology and root mean square (RMS) roughness of the free-standing wafers are characterized using a white light interferometer, a laser interferometer and an atomic force microscope. X-ray tomography is employed to measure the surface crystalline quality and strain defects of the samples subjected to the polishing treatments. The results show that with the optimum polishing condition, the polished GaSb wafers demonstrate high-quality surfaces without haze, scratches or strain defect regions. The peak to valley value is 5.0 μm and the RMS roughness can be controlled at less than 0.13 nm. A buffer layer grown on the GaSb surface with molecular beam epitaxy is examined via atomic force microscopy and high-resolution X-ray diffraction, which show a low RMS roughness of 0.159 nm, a well-controlled two-dimensional growth mode and a full width half maximum of the Bragg diffraction peak of 14.2”, indicating high-quality GaSb wafers. Thus, this work provides useful guidelines for achieving GaSb wafers with high-quality surfaces that show significant promise for substrate applications.

scholarly journals Elemental boron doping behavior in silicon molecular beam epitaxy

1991 ◽  
Vol 58 (5) ◽  
pp. 481-483 ◽  
Author(s):  
C. P. Parry ◽  
S. M. Newstead ◽  
R. D. Barlow ◽  
P. Augustus ◽  
R. A. A. Kubiak ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doping ◽  
Elemental Boron ◽  
Doping Behavior

A detailed Hall‐effect analysis of sulfur‐doped gallium antimonide grown by molecular‐beam epitaxy

1990 ◽  
Vol 68 (1) ◽  
pp. 131-137 ◽  
Author(s):  
M. E. Lee ◽  
I. Poole ◽  
W. S. Truscott ◽  
I. R. Cleverley ◽  
K. E. Singer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Effect Analysis

Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy

1981 ◽  
Vol 52 (12) ◽  
pp. 7214-7218 ◽  
Author(s):  
G. J. Davies ◽  
D. A. Andrews ◽  
R. Heckingbottom
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sulfur Doping
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