Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

Shun Tung Yen;  Chien-Ping Lee

doi:10.1109/3.709580

Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.709580 ◽

1998 ◽

Vol 34 (9) ◽

pp. 1644-1651 ◽

Cited By ~ 9

Author(s):

Shun Tung Yen ◽

Chien-Ping Lee

Keyword(s):

Active Region ◽

Quantum Well ◽

Quantum Well Lasers ◽

Strained Quantum Well

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GaInAs/InP Strained Quantum-Well Lasers with Narrow Active Region Fabricated by EBX Direct Writing and 2-Step OMVPE Growth

10.7567/ssdm.1993.s-v-7 ◽

1993 ◽

Author(s):

Shigehisa ARAI ◽

Koji KUDO ◽

Yasunari MIYAKE

Keyword(s):

Active Region ◽

Quantum Well ◽

Quantum Well Lasers ◽

Direct Writing ◽

Strained Quantum Well

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High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Electronics Letters ◽

10.1049/el:19930165 ◽

1993 ◽

Vol 29 (2) ◽

pp. 240 ◽

Cited By ~ 6

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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Comment on “Theory and Experiment of ${\hbox{In}}_{1-{x}}{\hbox {Ga}}_{x}{\hbox {As}}_{y}{\hbox{P}}_{1-{y}}$ and ${\hbox{In}}_{1-{x}-{y}}{\hbox {Ga}}_{x}{\hbox {Al}}_{y}{\hbox {As}}$ Long-Wavelength-Strained Quantum-Well Lasers”

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.2009.2025251 ◽

2009 ◽

Vol 45 (10) ◽

pp. 1302-1302 ◽

Cited By ~ 1

Author(s):

Yean-Sheng Yong ◽

Hin-Yong Wong ◽

Ho-Kwang Yow

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Long Wavelength ◽

Strained Quantum Well ◽

Theory And Experiment

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Temperature-dependent behavior of 980-nm strained quantum well lasers

10.1117/12.208443 ◽

1995 ◽

Cited By ~ 1

Author(s):

Rashit F. Nabiev ◽

Edward C. Vail ◽

Constance J. Chang-Hasnain

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Dependent ◽

Dependent Behavior ◽

Strained Quantum Well ◽

Temperature Dependent Behavior

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Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.760325 ◽

1999 ◽

Vol 35 (5) ◽

pp. 771-782 ◽

Cited By ~ 170

Author(s):

J. Minch ◽

S.H. Park ◽

T. Keating ◽

S.L. Chuang

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Long Wavelength ◽

Strained Quantum Well ◽

Theory And Experiment

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ZnMgSSe/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588148 ◽

1995 ◽

Vol 13 (2) ◽

pp. 731 ◽

Cited By ~ 2

Author(s):

I. W. Tao

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Quantum Well

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Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

Electronics Letters ◽

10.1049/el:19930583 ◽

1993 ◽

Vol 29 (10) ◽

pp. 873-875 ◽

Cited By ~ 9

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

Y. Matsui ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

Optical Interconnects ◽

High Speed ◽

Quantum Well Lasers ◽

Laser Threshold ◽

Buried Heterostructure ◽

Strained Quantum Well

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Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6569 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6569-6574 ◽

Cited By ~ 6

Author(s):

Munehisa Tamura ◽

Takashi Kojima ◽

Toshikazu Ando ◽

Nobuhiro Nunoya ◽

Shigeo Tamura ◽

...

Keyword(s):

Active Region ◽

Quantum Well ◽

Vapor Phase ◽

Chemical Etching ◽

Quantum Well Lasers ◽

Epitaxial Regrowth ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Recombination Velocity ◽

Metallic Vapor

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Facet degradation of aged strained quantum‐well lasers studied by high‐voltage electron‐beam‐induced current

Applied Physics Letters ◽

10.1063/1.111346 ◽

1994 ◽

Vol 64 (23) ◽

pp. 3145-3147 ◽

Cited By ~ 8

Author(s):

M. C. Wang ◽

D. M. Hwang ◽

P. S. D. Lin ◽

L. Dechiaro ◽

C. E. Zah ◽

...

Keyword(s):

Electron Beam ◽

Quantum Well ◽

High Voltage ◽

Quantum Well Lasers ◽

Induced Current ◽

Voltage Electron ◽

High Voltage Electron ◽

Electron Beam Induced Current ◽

Strained Quantum Well

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Experimental Determination of the Intraband Relaxation Time in Strained Quantum Well Lasers

Hot Carriers in Semiconductors ◽

10.1007/978-1-4613-0401-2_135 ◽

1996 ◽

pp. 591-593 ◽

Cited By ~ 1

Author(s):

M. Zimmermann ◽

S. Krämer ◽

F. Steinhagen ◽

H. Hillmer ◽

H. Burkhard ◽

...

Keyword(s):

Relaxation Time ◽

Quantum Well ◽

Experimental Determination ◽

Quantum Well Lasers ◽

Intraband Relaxation ◽

Strained Quantum Well

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