scholarly journals Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy

1990 ◽  
Vol 56 (2) ◽  
pp. 103-104 ◽  
Author(s):  
Jagadeesh Pamulapati ◽  
Pallab K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Single Mode ◽  
Phase Shifters

Si 1- x Ge x /Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy

1994 ◽  
Vol 11 (12) ◽  
pp. 734-736
Author(s):  
Yong Gao ◽  
Enke Liu ◽  
Guozheng Li ◽  
Xiding Liu ◽  
Xiangjiu Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Rib Waveguides

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 12A) ◽  
pp. L1555-L1557 ◽  
Author(s):  
Ru-Shang Hsiao ◽  
Jyh-Shyang Wang ◽  
Kun-Feng Lin ◽  
Li Wei ◽  
Hui-Yu Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Mode ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

1990 ◽  
Vol 56 (20) ◽  
pp. 1939-1941 ◽  
Author(s):  
D. J. Arent ◽  
L. Brovelli ◽  
H. Jäckel ◽  
E. Marclay ◽  
H. P. Meier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Single Mode ◽  
Single Quantum ◽  
Single Quantum Well

Photorefractive semiconductor single-mode waveguides grown by gas-source molecular-beam epitaxy

1995 ◽  
Vol 20 (15) ◽  
pp. 1604 ◽  
Author(s):  
B. Ŕebéjac ◽  
M. Chauvet ◽  
D. Hervé ◽  
S. Saläun ◽  
A. Le Corre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Gas Source

Low‐loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy

1990 ◽  
Vol 56 (9) ◽  
pp. 802-804 ◽  
Author(s):  
Y. S. Kim ◽  
S. S. Lee ◽  
R. V. Ramaswamy ◽  
S. Sakai ◽  
Y. C. Kao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Phase Modulator ◽  
Low Loss

1.55μm GaAs∕GaNAsSb∕GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 92 (11) ◽  
pp. 113513 ◽  
Author(s):  
K. H. Tan ◽  
S. F. Yoon ◽  
W. K. Loke ◽  
S. Wicaksono ◽  
Z. Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Nitrogen Plasma
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