Low‐loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy

1990 ◽  
Vol 56 (9) ◽  
pp. 802-804 ◽  
Author(s):  
Y. S. Kim ◽  
S. S. Lee ◽  
R. V. Ramaswamy ◽  
S. Sakai ◽  
Y. C. Kao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Phase Modulator ◽  
Low Loss

ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy

2009 ◽  
Vol 156 (4) ◽  
pp. J73 ◽  
Author(s):  
C. H. Hsiao ◽  
S. J. Chang ◽  
S. B. Wang ◽  
S. P. Chang ◽  
T. C. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam

Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy

2020 ◽  
Vol 127 (23) ◽  
pp. 235302
Author(s):  
C. J. K. Richardson ◽  
A. Alexander ◽  
C. G. Weddle ◽  
B. Arey ◽  
M. Olszta
Keyword(s):  
Molecular Beam Epitaxy ◽  
Titanium Nitride ◽  
Molecular Beam ◽  
Low Loss

InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy

2009 ◽  
Vol 20 (32) ◽  
pp. 325605 ◽  
Author(s):  
A P Vajpeyi ◽  
A O Ajagunna ◽  
K Tsagaraki ◽  
M Androulidaki ◽  
A Georgakilas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A III B V/Si-solar energy converters on an active silicon substrate

2011 ◽  
Vol 53 (9) ◽  
pp. 906-913 ◽  
Author(s):  
M. A. Putyato ◽  
B. R. Semyagin ◽  
E. A. Emel’yanov ◽  
N. A. Pakhanov ◽  
V. V. Preobrazhenskii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Solar Energy ◽  
Silicon Substrate ◽  
High Performance ◽  
Molecular Beam ◽  
Energy Converters

Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature

2003 ◽  
Vol 798 ◽  
Author(s):  
F. Semond ◽  
D. Byrne ◽  
F. Natali ◽  
M. Leroux ◽  
J. Massies ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strong Coupling ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Cavity ◽  
Strong Coupling Regime ◽  
Rabi Splitting ◽  
Dielectric Mirror ◽  
High Finesse

ABSTRACTIn a recent paper [Phys. Rev. B 68, 153313 (2003)], we reported the first experimental observation of the strong coupling regime in a GaN-based microcavity. The λ/2 GaN optical cavity was grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom mirror. With such a relatively simple and low-finesse microcavity, a Rabi splitting of 31 meV was measured at 5K. On the basis of this very encouraging result, approaches to fabricate high-finesse GaN-based cavities exhibiting strong coupling with stable polaritons at room temperature are discussed.

Low‐loss AlxGa1−xAs waveguides grown by molecular beam epitaxy

1976 ◽  
Vol 28 (8) ◽  
pp. 456-458 ◽  
Author(s):  
J. L. Merz ◽  
A. Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Loss

Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate

2019 ◽  
Vol 45 (11) ◽  
pp. 1111-1113 ◽  
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
N. V. Kryzhanovskaya ◽  
S. V. Morozov ◽  
G. E. Cirlin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam
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