Single‐mode molecular beam epitaxy grown PbEuSeTe/PbTe buried‐heterostructure diode lasers for CO2high‐resolution spectroscopy

1991 ◽  
Vol 58 (4) ◽  
pp. 343-345 ◽  
Author(s):  
Z. Feit ◽  
D. Kostyk ◽  
R. J. Woods ◽  
P. Mak
1990 ◽  
Vol 2 (12) ◽  
pp. 860-862 ◽  
Author(s):  
Z. Feit ◽  
D. Kostyk ◽  
R.J. Woods ◽  
P. Mak

1994 ◽  
Vol 11 (12) ◽  
pp. 734-736
Author(s):  
Yong Gao ◽  
Enke Liu ◽  
Guozheng Li ◽  
Xiding Liu ◽  
Xiangjiu Zhang ◽  
...  

2012 ◽  
Vol 100 (21) ◽  
pp. 213504 ◽  
Author(s):  
M. Chashnikova ◽  
G. Monastyrskyi ◽  
A. Aleksandrova ◽  
M. Klinkmüller ◽  
M. P. Semtsiv ◽  
...  

Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.


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