1.55μm GaAs∕GaNAsSb∕GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 92 (11) ◽  
pp. 113513 ◽  
Author(s):  
K. H. Tan ◽  
S. F. Yoon ◽  
W. K. Loke ◽  
S. Wicaksono ◽  
Z. Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Nitrogen Plasma

Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

2006 ◽  
Vol 100 (8) ◽  
pp. 083516 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Costel Constantin ◽  
Erdong Lu ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Surface Reconstructions

scholarly journals High responsivity GaNAsSb p-i-n photodetectors at 13µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 16 (11) ◽  
pp. 7720 ◽  
Author(s):  
K. H. Tan ◽  
S. F. Yoon ◽  
W. K. Loke ◽  
S. Wicaksono ◽  
T. K. Ng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
High Responsivity

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

Incorporation of manganese into semiconducting ScN using radio frequency molecular beam epitaxy

2004 ◽  
Vol 96 (7) ◽  
pp. 3787-3792 ◽  
Author(s):  
Hamad A. AL-Brithen ◽  
Haiqiang Yang ◽  
Arthur R. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam
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