High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

1990 ◽  
Vol 56 (20) ◽  
pp. 1939-1941 ◽  
Author(s):  
D. J. Arent ◽  
L. Brovelli ◽  
H. Jäckel ◽  
E. Marclay ◽  
H. P. Meier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Single Mode ◽  
Single Quantum ◽  
Single Quantum Well

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate
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