Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure

1989 ◽  
Vol 55 (13) ◽  
pp. 1318-1320 ◽  
Author(s):  
Y. Mochizuki ◽  
M. Mizuta ◽  
S. Fujieda ◽  
Y. Matsumoto
Keyword(s):  
Charge Trapping ◽  
Interface States ◽  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

scholarly journals Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states

2019 ◽  
Vol 671 ◽  
pp. 18-21 ◽  
Author(s):  
D.A. Smolyakov ◽  
A.S. Tarasov ◽  
I.A. Yakovlev ◽  
A.N. Masyugin ◽  
M.N. Volochaev ◽  
...  
Keyword(s):  
Magnetic State ◽  
Interface States ◽  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document