Study of charge trapping instabilities in a silicon‐nitride/indium‐phosphide metal‐insulator‐semiconductor structure by the constant‐capacitance method

C. H. Kim; B. D. Choe; H. Lim; I. K. Han; J. I. Lee; K. N. Kang

doi:10.1063/1.352083

Study of charge trapping instabilities in a silicon‐nitride/indium‐phosphide metal‐insulator‐semiconductor structure by the constant‐capacitance method

Journal of Applied Physics ◽

10.1063/1.352083 ◽

1992 ◽

Vol 72 (10) ◽

pp. 4743-4748 ◽

Cited By ~ 1

Author(s):

C. H. Kim ◽

B. D. Choe ◽

H. Lim ◽

I. K. Han ◽

J. I. Lee ◽

...

Keyword(s):

Silicon Nitride ◽

Indium Phosphide ◽

Charge Trapping ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Method

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Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure

Applied Physics Letters ◽

10.1063/1.101642 ◽

1989 ◽

Vol 55 (13) ◽

pp. 1318-1320 ◽

Cited By ~ 12

Author(s):

Y. Mochizuki ◽

M. Mizuta ◽

S. Fujieda ◽

Y. Matsumoto

Keyword(s):

Charge Trapping ◽

Interface States ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2014.950265 ◽

2014 ◽

Vol 169 (9) ◽

pp. 791-799 ◽

Cited By ~ 9

Author(s):

Raziye Ertuğrul ◽

Adem Tataroğlu

Keyword(s):

Silicon Nitride ◽

Gamma Irradiation ◽

Semiconductor Structure ◽

Electrical Parameters ◽

Insulator Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

Journal of Materials Science Letters ◽

10.1007/bf00592609 ◽

1994 ◽

Vol 13 (8) ◽

pp. 563-565

Author(s):

C. H. Kim ◽

I. K. Han ◽

J. I. Lee ◽

K. N. Kang ◽

S. D. Kwon ◽

...

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Charge Trapping ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Ultraviolet Illumination

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Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal–insulator–semiconductor structure

Ultramicroscopy ◽

10.1016/j.ultramic.2008.04.041 ◽

2008 ◽

Vol 108 (10) ◽

pp. 1215-1219 ◽

Cited By ~ 8

Author(s):

JungYup Yang ◽

JooHyung Kim ◽

JunSeok Lee ◽

SeungKi Min ◽

HyunJung Kim ◽

...

Keyword(s):

Au Nanoparticles ◽

Electrostatic Force ◽

Charge Trapping ◽

Semiconductor Structure ◽

Electrostatic Force Microscopy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Force Microscopy

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Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Cited By ~ 3

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

P Type

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Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe

Microelectronics Reliability ◽

10.1016/0026-2714(85)90335-x ◽

1985 ◽

Vol 25 (3) ◽

pp. 593

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.343099 ◽

1989 ◽

Vol 65 (2) ◽

pp. 651-661 ◽

Cited By ~ 2

Author(s):

S. Mitsutsuka ◽

T. Okamoto ◽

T. Niitsuma ◽

S. Minagawa

Keyword(s):

Acoustic Waves ◽

Surface Acoustic Waves ◽

Semiconductor Structure ◽

Propagation Loss ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Time‐dependent response of interface states in indium phosphide metal–insulator–semiconductor capacitors investigated with constant‐capacitance deep‐level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.332582 ◽

1983 ◽

Vol 54 (7) ◽

pp. 4014-4021 ◽

Cited By ~ 66

Author(s):

P. van Staa ◽

H. Rombach ◽

R. Kassing

Keyword(s):

Indium Phosphide ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Interface States ◽

Time Dependent ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Transient Spectroscopy

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InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques

Solid State Communications ◽

10.1016/0038-1098(87)90748-4 ◽

1987 ◽

Vol 64 (4) ◽

pp. 411-416 ◽

Cited By ~ 5

Author(s):

P. Bogdanski ◽

F. Murray ◽

J.P. Piel

Keyword(s):

Semiconductor Structure ◽

Structure Parameters ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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