Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

C. H. Kim; I. K. Han; J. I. Lee; K. N. Kang; S. D. Kwon; B. Choe; H. L. Park; J. Her; H. Lim

doi:10.1007/bf00592609

Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

Journal of Materials Science Letters ◽

10.1007/bf00592609 ◽

1994 ◽

Vol 13 (8) ◽

pp. 563-565

Author(s):

C. H. Kim ◽

I. K. Han ◽

J. I. Lee ◽

K. N. Kang ◽

S. D. Kwon ◽

...

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Charge Trapping ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Ultraviolet Illumination

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Cited By ~ 9

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Combined effect of (NH4)2Sxtreatment and post-metallization annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/3/311 ◽

2002 ◽

Vol 17 (3) ◽

pp. 243-248 ◽

Cited By ~ 4

Author(s):

K Remashan ◽

K N Bhat

Keyword(s):

Silicon Nitride ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Gate Dielectric ◽

Chemical Vapour ◽

Combined Effect ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gaas Substrates

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Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure

Applied Physics Letters ◽

10.1063/1.101642 ◽

1989 ◽

Vol 55 (13) ◽

pp. 1318-1320 ◽

Cited By ~ 12

Author(s):

Y. Mochizuki ◽

M. Mizuta ◽

S. Fujieda ◽

Y. Matsumoto

Keyword(s):

Charge Trapping ◽

Interface States ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal–insulator–semiconductor structure

Ultramicroscopy ◽

10.1016/j.ultramic.2008.04.041 ◽

2008 ◽

Vol 108 (10) ◽

pp. 1215-1219 ◽

Cited By ~ 8

Author(s):

JungYup Yang ◽

JooHyung Kim ◽

JunSeok Lee ◽

SeungKi Min ◽

HyunJung Kim ◽

...

Keyword(s):

Au Nanoparticles ◽

Electrostatic Force ◽

Charge Trapping ◽

Semiconductor Structure ◽

Electrostatic Force Microscopy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Force Microscopy

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Study of charge trapping instabilities in a silicon‐nitride/indium‐phosphide metal‐insulator‐semiconductor structure by the constant‐capacitance method

Journal of Applied Physics ◽

10.1063/1.352083 ◽

1992 ◽

Vol 72 (10) ◽

pp. 4743-4748 ◽

Cited By ~ 1

Author(s):

C. H. Kim ◽

B. D. Choe ◽

H. Lim ◽

I. K. Han ◽

J. I. Lee ◽

...

Keyword(s):

Silicon Nitride ◽

Indium Phosphide ◽

Charge Trapping ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Method

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Homogeneous nucleation during crystallization of amorphous silicon produced by low-pressure chemical vapour deposition

Philosophical Magazine A ◽

10.1080/01418610110067734 ◽

2002 ◽

Vol 82 (1) ◽

pp. 137-165 ◽

Cited By ~ 1

Author(s):

A. Q. He ◽

A. H. Heuer ◽

H. Kahn

Keyword(s):

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Homogeneous Nucleation ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Pressure Chemical

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Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999849 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-395-Pr8-402 ◽

Cited By ~ 2

Author(s):

B. Armas ◽

M. de Icaza Herrera ◽

C. Combescure ◽

F. Sibieude ◽

D. Thenegal

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Cold Wall ◽

Pressure Chemical ◽

Mullite Coatings

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Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999846 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-373-Pr8-380 ◽

Cited By ~ 1

Author(s):

P. Sourdiaucourt ◽

A. Derré ◽

P. Delhaès ◽

P. David

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Hafnium Carbide ◽

Experimental Conditions

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Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:2001324 ◽

2001 ◽

Vol 11 (PR3) ◽

pp. Pr3-189-Pr3-196

Author(s):

L. Zambov ◽

B. Caussat ◽

R. Boubeker ◽

J.-P. Couderc

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Film Formation ◽

Chemical Vapour ◽

Low Pressure ◽

Pressure Chemical ◽

Kinetics Of

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Potentials of laser chemical vapour deposition processes in the high temperature corrosion protection of automotive parts

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5059100 ◽

1996 ◽

Author(s):

J. Pou ◽

P. González ◽

E. García ◽

J. Serra ◽

B. León ◽

...

Keyword(s):

High Temperature ◽

Corrosion Protection ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

High Temperature Corrosion ◽

Automotive Parts ◽

Deposition Processes

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