The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

2014 ◽  
Vol 104 (22) ◽  
pp. 222406 ◽  
Author(s):  
N. V. Volkov ◽  
A. S. Tarasov ◽  
D. A. Smolyakov ◽  
A. O. Gustaitsev ◽  
V. V. Balashev ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Semiconductor Structure ◽  
Giant Magnetoimpedance ◽  
Metal Insulator ◽  
Giant Magnetoimpedance Effect ◽  
Metal Insulator Semiconductor

scholarly journals Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states

2019 ◽  
Vol 671 ◽  
pp. 18-21 ◽  
Author(s):  
D.A. Smolyakov ◽  
A.S. Tarasov ◽  
I.A. Yakovlev ◽  
A.N. Masyugin ◽  
M.N. Volochaev ◽  
...  
Keyword(s):  
Magnetic State ◽  
Interface States ◽  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

scholarly journals Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy

2018 ◽  
Vol 8 (9) ◽  
pp. 1493 ◽  
Author(s):  
Hideyuki Hatta ◽  
Yuhi Miyagawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Takashi Hamada ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Field Effect Transistors ◽  
Interface State ◽  
Interface States ◽  
Localized States ◽  
Electrical Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators ◽  
Mis Capacitors

Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated.

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