High‐speed InP/InGaAsP metal‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

1989 ◽  
Vol 54 (2) ◽  
pp. 176-178
Author(s):  
A. Antreasyan ◽  
P. A. Garbinski ◽  
V. D. Mattera ◽  
M. D. Feuer ◽  
J. Filipe ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy

High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

1987 ◽  
Vol 51 (14) ◽  
pp. 1097-1099 ◽  
Author(s):  
A. Antreasyan ◽  
P. A. Garbinski ◽  
V. D. Mattera ◽  
H. Temkin ◽  
J. H. Abeles
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy

1987 ◽  
Vol 34 (9) ◽  
pp. 1897-1901 ◽  
Author(s):  
A. Antreasyan ◽  
P.A. Garbinski ◽  
V.D. Mattera ◽  
J.M. Wiesenfeld ◽  
R.S. Tucker ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (11) ◽  
pp. 7562-7568 ◽  
Author(s):  
Jinichiro Noborisaka ◽  
Takuya Sato ◽  
Junichi Motohisa ◽  
Shinjiro Hara ◽  
Katsuhiro Tomioka ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic ◽  
Electrical Characterizations

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy

1989 ◽  
Vol 36 (2) ◽  
pp. 256-262 ◽  
Author(s):  
A. Antreasyan ◽  
P.A. Garbinski ◽  
V.D. Mattera ◽  
M.D. Feuer ◽  
H. Temkin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Enhancement Mode

High Speed Ga0.47In0.53As MISFETs Grown by Metal Organic Vapor Phase Epitaxy

ESSDERC ’89 ◽  
1989 ◽  
pp. 267-270
Author(s):  
J. Splettstößer ◽  
F. Schulte ◽  
A. Trasser ◽  
D. Schmitz ◽  
H. Beneking
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic
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