High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

A. Antreasyan; P. A. Garbinski; V. D. Mattera; H. Temkin; J. H. Abeles

doi:10.1063/1.98752

High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.98752 ◽

1987 ◽

Vol 51 (14) ◽

pp. 1097-1099 ◽

Cited By ~ 14

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin ◽

J. H. Abeles

Keyword(s):

Vapor Phase ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Vapor Phase Epitaxy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23173 ◽

1987 ◽

Vol 34 (9) ◽

pp. 1897-1901 ◽

Cited By ~ 4

Author(s):

A. Antreasyan ◽

P.A. Garbinski ◽

V.D. Mattera ◽

J.M. Wiesenfeld ◽

R.S. Tucker ◽

...

Keyword(s):

Vapor Phase ◽

Field Effect ◽

Field Effect Transistors ◽

Vapor Phase Epitaxy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

Applied Physics Letters ◽

10.1063/1.97105 ◽

1986 ◽

Vol 49 (9) ◽

pp. 513-515 ◽

Cited By ~ 9

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

High Transconductance ◽

Very High

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High‐speed InP/InGaAsP metal‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.101372 ◽

1989 ◽

Vol 54 (2) ◽

pp. 176-178

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

M. D. Feuer ◽

J. Filipe ◽

...

Keyword(s):

Vapor Phase ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Vapor Phase Epitaxy

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Cited By ~ 45

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

Biosensors and Biodetection - Methods in Molecular Biology ◽

10.1007/978-1-4939-6911-1_15 ◽

2017 ◽

pp. 217-232 ◽

Cited By ~ 3

Author(s):

Jiangwei Liu ◽

Yasuo Koide

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

Journal of Computational Electronics ◽

10.1007/s10825-019-01320-8 ◽

2019 ◽

Vol 18 (2) ◽

pp. 527-533

Author(s):

Jing Sun ◽

Yanping Li ◽

Lei Cao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain

ECS Meeting Abstracts ◽

10.1149/ma2008-01/16/669 ◽

2008 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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