Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

W. S. Tan; P. A. Houston; P. J. Parbrook; D. A. Wood; G. Hill; C. R. Whitehouse

doi:10.1063/1.1473701

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.1473701 ◽

2002 ◽

Vol 80 (17) ◽

pp. 3207-3209 ◽

Cited By ~ 86

Author(s):

W. S. Tan ◽

P. A. Houston ◽

P. J. Parbrook ◽

D. A. Wood ◽

G. Hill ◽

...

Keyword(s):

Breakdown Voltage ◽

Vapor Phase ◽

Field Effect ◽

Field Effect Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l111 ◽

2006 ◽

Vol 45 (No. 4) ◽

pp. L111-L113 ◽

Cited By ~ 25

Author(s):

Tamotsu Hashizume ◽

Junji Kotani ◽

Alberto Basile ◽

Masamitsu Kaneko

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Control Process ◽

Gate Leakage ◽

Leakage Currents ◽

Surface Control ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1589520 ◽

2003 ◽

Vol 21 (4) ◽

pp. 1844 ◽

Cited By ~ 158

Author(s):

Hideki Hasegawa ◽

Takanori Inagaki ◽

Shinya Ootomo ◽

Tamotsu Hashizume

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage ◽

Leakage Currents ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.084102 ◽

2011 ◽

Vol 50 (8R) ◽

pp. 084102 ◽

Cited By ~ 8

Author(s):

Yoshinori Oshimura ◽

Takayuki Sugiyama ◽

Kenichiro Takeda ◽

Motoaki Iwaya ◽

Tetsuya Takeuchi ◽

...

Keyword(s):

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Breakdown Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

10.7567/ssdm.2004.g-4-3 ◽

2004 ◽

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

Toshiki Makimoto ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

High Transconductance

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A novel junction field plates AlGaN/GaN heterostructure field effect transistors with high breakdown voltage and Baliga's figure of merit for power electronics application

2018 International Conference on Electronics Technology (ICET) ◽

10.1109/eltech.2018.8401421 ◽

2018 ◽

Cited By ~ 1

Author(s):

Zhiyuan Bai ◽

Jiangfeng Du ◽

Qi Yu

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Field Effect ◽

Figure Of Merit ◽

Field Effect Transistors ◽

High Breakdown Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2005.10.034 ◽

2006 ◽

Vol 50 (2) ◽

pp. 125-128 ◽

Cited By ~ 1

Author(s):

Hung-Pin Shiao

Keyword(s):

Vapor Phase ◽

Field Effect ◽

Field Effect Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buffer Structure

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High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator

Applied Physics Letters ◽

10.1063/1.2012535 ◽

2005 ◽

Vol 87 (7) ◽

pp. 073504 ◽

Cited By ~ 22

Author(s):

Narihiko Maeda ◽

Chengxin Wang ◽

Takatomo Enoki ◽

Toshiki Makimoto ◽

Takehiko Tawara

Keyword(s):

Leakage Current ◽

Current Density ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Gate Insulator ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Al2O3/Si3N4Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure: Low Gate Leakage Current with High Transconductance

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2747 ◽

2005 ◽

Vol 44 (4B) ◽

pp. 2747-2750 ◽

Cited By ~ 7

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

Toshiki Makimoto ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

High Transconductance

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AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.084102 ◽

2011 ◽

Vol 50 (8) ◽

pp. 084102

Author(s):

Yoshinori Oshimura ◽

Takayuki Sugiyama ◽

Kenichiro Takeda ◽

Motoaki Iwaya ◽

Tetsuya Takeuchi ◽

...

Keyword(s):

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Breakdown Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.094502 ◽

2009 ◽

Vol 48 (9) ◽

pp. 094502 ◽

Cited By ~ 12

Author(s):

Norio Onojima ◽

Nobumitsu Hirose ◽

Takashi Mimura ◽

Toshiaki Matsui

Keyword(s):

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

State Breakdown ◽

Gan Heterostructure

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