InGaAs/InP junction field-effect transistors with high transconductance made using metal organic vapor phase epitaxy

1985 ◽  
Vol 6 (12) ◽  
pp. 626-627 ◽  
Author(s):  
D. Wake ◽  
A.W. Nelson ◽  
S. Cole ◽  
S. Wong ◽  
I.D. Henning ◽  
...  
2007 ◽  
Vol 46 (11) ◽  
pp. 7562-7568 ◽  
Author(s):  
Jinichiro Noborisaka ◽  
Takuya Sato ◽  
Junichi Motohisa ◽  
Shinjiro Hara ◽  
Katsuhiro Tomioka ◽  
...  

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano

2010 ◽  
Vol 49 (10) ◽  
pp. 101001 ◽  
Author(s):  
Kimihito Ooyama ◽  
Katsuya Sugawara ◽  
Shinya Okuzaki ◽  
Hiroyuki Taketomi ◽  
Hideto Miyake ◽  
...  

2004 ◽  
Vol 267 (1-2) ◽  
pp. 140-144 ◽  
Author(s):  
A. Dadgar ◽  
N. Oleynik ◽  
D. Forster ◽  
S. Deiter ◽  
H. Witek ◽  
...  

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  

1999 ◽  
Vol 59 (15) ◽  
pp. 10296-10301 ◽  
Author(s):  
A. J. Heinrich ◽  
M. Wenderoth ◽  
K. J. Engel ◽  
T. C. G. Reusch ◽  
K. Sauthoff ◽  
...  

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