Dislocation density reduction by isoelectronic impurities in semiconductors

1989 ◽  
Vol 54 (20) ◽  
pp. 2009-2011 ◽  
Author(s):  
W. Walukiewicz
Keyword(s):  
Dislocation Density ◽  
Density Reduction ◽  
Impurities In Semiconductors ◽  
Isoelectronic Impurities

Isoelectronic impurities in semiconductors

1967 ◽  
Vol 5 (9) ◽  
pp. xi-xii
Author(s):  
R.A. Faulkner ◽  
J.J. Hopfield
Keyword(s):  
Impurities In Semiconductors ◽  
Isoelectronic Impurities

Experiments and analysis of the two-step growth of InGaAs on GaAs substrate

CrystEngComm ◽  
2015 ◽  
Vol 17 (30) ◽  
pp. 5808-5813 ◽  
Author(s):  
Jinping Li ◽  
Guoqing Miao ◽  
Zhiwei Zhang ◽  
Yugang Zeng
Keyword(s):  
Dislocation Density ◽  
Epitaxial Layer ◽  
Gaas Substrate ◽  
Density Reduction ◽  
Step Growth

In this highlight, a mechanism has been proposed to explain the dislocation density reduction in the epitaxial layer by a LT-buffer.

A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth

2004 ◽  
Vol 831 ◽  
Author(s):  
M. E. Twigg ◽  
N. D. Bassim ◽  
C. R. Eddy ◽  
R. L. Henry ◽  
R. T. Holm ◽  
...  
Keyword(s):  
Grain Size ◽  
Dislocation Density ◽  
Column Height ◽  
Critical Height ◽  
Patterned Growth ◽  
Sapphire Substrates ◽  
Density Reduction ◽  
Vertical Leakage ◽  
Dislocation Annihilation ◽  
Gan Film

ABSTRACTIn order to reduce vertical leakage in III-nitride detectors, we have grown a patterned array of hexagonal GaN columns on masked heteroepitaxial GaN template layers using a-plane sapphire substrates. In addition to eliminating cracking, we have found that for GaN columns tens of microns in diameter and several microns high, the dislocation density is also significantly reduced. We have developed a simple closed-form analytical model for predicting the critical column height for the onset of the reduction in the dislocation density. Among the predictions of this model is that the critical column height for the onset of dislocation density reduction is proportional to the product of column width and the grain size of the GaN film.

Dislocation density reduction in multicrystalline silicon via cyclic annealing

2015 ◽  
Vol 212 (10) ◽  
pp. 2315-2321 ◽  
Author(s):  
Kwangmin Choi ◽  
Sergio Castellanos ◽  
Douglas Michael Powell ◽  
Tonio Buonassisi ◽  
Hyunjoo Choi
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Cyclic Annealing ◽  
Density Reduction
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