Dislocation density reduction in multicrystalline silicon via cyclic annealing

2015 ◽  
Vol 212 (10) ◽  
pp. 2315-2321 ◽  
Author(s):  
Kwangmin Choi ◽  
Sergio Castellanos ◽  
Douglas Michael Powell ◽  
Tonio Buonassisi ◽  
Hyunjoo Choi
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Cyclic Annealing ◽  
Density Reduction

scholarly journals Dislocation Density Reduction During Impurity Gettering in Multicrystalline Silicon

2013 ◽  
Vol 3 (1) ◽  
pp. 189-198 ◽  
Author(s):  
H. J. Choi ◽  
M. I. Bertoni ◽  
J. Hofstetter ◽  
D. P. Fenning ◽  
D. M. Powell ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Density Reduction

An insight into dislocation density reduction in multicrystalline silicon

2016 ◽  
Vol 155 ◽  
pp. 88-100 ◽  
Author(s):  
Soobin Woo ◽  
Mariana Bertoni ◽  
Kwangmin Choi ◽  
Seungjin Nam ◽  
Sergio Castellanos ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Density Reduction ◽  
Insight Into

Dislocation Engineering in Multicrystalline Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 11-18 ◽  
Author(s):  
Mariana I. Bertoni ◽  
Clémence Colin ◽  
Tonio Buonassisi
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Temperature Treatment ◽  
Multicrystalline Silicon ◽  
High Temperature Treatment ◽  
Face Centered Cubic ◽  
Ambient Conditions ◽  
Density Reduction ◽  
Dislocation Movement ◽  
Dislocation Annihilation

Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

Stress-enhanced dislocation density reduction in multicrystalline silicon

2010 ◽  
Vol 5 (1) ◽  
pp. 28-30 ◽  
Author(s):  
M. I. Bertoni ◽  
D. M. Powell ◽  
M. L. Vogl ◽  
S. Castellanos ◽  
A. Fecych ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Density Reduction
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