Reaction-kinetics model for threading dislocation density reduction in GaN porous layer

2014 ◽  
Author(s):  
D. M. Artemiev ◽  
T. S. Orlova ◽  
V. E. Bougrov ◽  
M. A. Odnoblyudov ◽  
A. E. Romanov
Keyword(s):  
Dislocation Density ◽  
Reaction Kinetics ◽  
Porous Layer ◽  
Kinetics Model ◽  
Threading Dislocation ◽  
Density Reduction ◽  
Threading Dislocation Density

scholarly journals Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers

2015 ◽  
Vol 44 (5) ◽  
pp. 1287-1292 ◽  
Author(s):  
Dmitry M. Artemiev ◽  
Tatiana S. Orlova ◽  
Vladislav E. Bougrov ◽  
Maxim A. Odnoblyudov ◽  
Alexei E. Romanov
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Density Reduction ◽  
Threading Dislocation Density ◽  
Nitride Layers

Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers

2006 ◽  
Vol 203 (10) ◽  
pp. R76-R78 ◽  
Author(s):  
T. Lang ◽  
M. A. Odnoblyudov ◽  
V. E. Bougrov ◽  
A. E. Romanov ◽  
S. Suihkonen ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multistep Method ◽  
Threading Dislocation ◽  
Density Reduction ◽  
Threading Dislocation Density

Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1730-1730
Author(s):  
Youcef Ataellah Bioud ◽  
Abderraouf Boucherif ◽  
Gilles Patriarche ◽  
Dominique Drouin ◽  
Richard Arès
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Free Surfaces ◽  
Density Reduction ◽  
Threading Dislocation Density

Threading dislocation density reduction in two-stage growth of GaN layers

2006 ◽  
Vol 203 (4) ◽  
pp. R25-R27 ◽  
Author(s):  
V. E. Bougrov ◽  
M. A. Odnoblyudov ◽  
A. E. Romanov ◽  
T. Lang ◽  
O. V. Konstantinov
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Two Stage ◽  
Density Reduction ◽  
Threading Dislocation Density

Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction

2020 ◽  
Vol 98 (5) ◽  
pp. 527-532
Author(s):  
Youcef Ataellah Bioud ◽  
Abderraouf Boucherif ◽  
Gilles Patriarche ◽  
Dominique Drouin ◽  
Richard Arès
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Free Surfaces ◽  
Density Reduction ◽  
Threading Dislocation Density

Dislocation Density Reduction in GaAs Epilayers on Si Using Strained Layer Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
S. Sharan ◽  
J. Narayan ◽  
J. C. C. Fan
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Full Potential ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Strained Layer ◽  
Density Reduction ◽  
Threading Dislocation Density ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

AbstractDefects such as dislocations and interfaces play a crucial role in the performance of heterostracture devices. The full potential of GaAs on Si heterostructures can only be realized by controlling the defect density. The reduction of threading dislocations by the use of strained layer superlattices has been studied in these heterostructures. Several superlattice structures have been used to reduce the density of threading dislocations in the GaAs epilayer. The use of strained layer superlattices in conjunction with rapid thermal annealing was most effective in reducing threading dislocation density. Transmission electron microscopy has been used to study the dislocation density reduction and the interaction of threading dislocations with the strained layers. A model has been developed based on energy considerations to determine the critical thickness required for the bending of threading dislocations.

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