Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

1989 ◽  
Vol 54 (8) ◽  
pp. 739-741 ◽  
Author(s):  
R. E. Cavicchi ◽  
D. V. Lang ◽  
D. Gershoni ◽  
A. M. Sergent ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Strained Layers ◽  
Band Offsets ◽  
Spectroscopy Measurement

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

1987 ◽  
Vol 50 (12) ◽  
pp. 736-738 ◽  
Author(s):  
D. V. Lang ◽  
M. B. Panish ◽  
F. Capasso ◽  
J. Allam ◽  
R. A. Hamm ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures

1999 ◽  
Vol 85 (2) ◽  
pp. 985-993 ◽  
Author(s):  
D. V. Singh ◽  
K. Rim ◽  
T. O. Mitchell ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Admittance Spectroscopy ◽  
Spectroscopy Analysis ◽  
Band Offsets

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

2009 ◽  
Vol 95 (16) ◽  
pp. 162104 ◽  
Author(s):  
Q. Chen ◽  
M. Yang ◽  
Y. P. Feng ◽  
J. W. Chai ◽  
Z. Zhang ◽  
...  
Keyword(s):  
Ab Initio ◽  
Photoelectron Spectroscopy ◽  
Ab Initio Calculation ◽  
Band Offsets ◽  
X Ray ◽  
Spectroscopy Measurement

Admittance spectroscopy measurement of band offset in GaAs‐GaAlAs multiquantum well

1990 ◽  
Vol 68 (1) ◽  
pp. 116-119 ◽  
Author(s):  
X. Letartre ◽  
D. Stievenard ◽  
M. Lannoo ◽  
D. Lippens
Keyword(s):  
Band Offset ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement ◽  
Multiquantum Well

Lattice mismatch and band offsets in strained layers

1986 ◽  
Vol 60 (8) ◽  
pp. 2893-2896 ◽  
Author(s):  
D. D. Coon ◽  
H. C. Liu
Keyword(s):  
Lattice Mismatch ◽  
Strained Layers ◽  
Band Offsets

Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of long wave-length infrared (LWIR) detectors

1992 ◽  
Vol 19 (1-4) ◽  
pp. 439-442 ◽  
Author(s):  
S.C. Jain ◽  
J. Poortmans ◽  
J. Nijs ◽  
P. Van Mieghem ◽  
R.P. Mertens ◽  
...  
Keyword(s):  
Wave Length ◽  
Strained Layers ◽  
Band Offsets ◽  
Long Wave ◽  
Heavily Doped ◽  
P Type

Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

1992 ◽  
Vol 60 (2) ◽  
pp. 195-197 ◽  
Author(s):  
K. Nauka ◽  
T. I. Kamins ◽  
J. E. Turner ◽  
C. A. King ◽  
J. L. Hoyt ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

scholarly journals Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

1997 ◽  
Vol 70 (25) ◽  
pp. 3413-3415 ◽  
Author(s):  
B. L. Stein ◽  
E. T. Yu ◽  
E. T. Croke ◽  
A. T. Hunter ◽  
T. Laursen ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets
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