Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy

1987 ◽  
Vol 5 (4) ◽  
pp. 1215 ◽  
Author(s):  
D. V. Lang
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

1987 ◽  
Vol 50 (12) ◽  
pp. 736-738 ◽  
Author(s):  
D. V. Lang ◽  
M. B. Panish ◽  
F. Capasso ◽  
J. Allam ◽  
R. A. Hamm ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures

1999 ◽  
Vol 85 (2) ◽  
pp. 985-993 ◽  
Author(s):  
D. V. Singh ◽  
K. Rim ◽  
T. O. Mitchell ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Admittance Spectroscopy ◽  
Spectroscopy Analysis ◽  
Band Offsets

Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

1989 ◽  
Vol 54 (8) ◽  
pp. 739-741 ◽  
Author(s):  
R. E. Cavicchi ◽  
D. V. Lang ◽  
D. Gershoni ◽  
A. M. Sergent ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Strained Layers ◽  
Band Offsets ◽  
Spectroscopy Measurement

Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

1992 ◽  
Vol 60 (2) ◽  
pp. 195-197 ◽  
Author(s):  
K. Nauka ◽  
T. I. Kamins ◽  
J. E. Turner ◽  
C. A. King ◽  
J. L. Hoyt ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

scholarly journals Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

1997 ◽  
Vol 70 (25) ◽  
pp. 3413-3415 ◽  
Author(s):  
B. L. Stein ◽  
E. T. Yu ◽  
E. T. Croke ◽  
A. T. Hunter ◽  
T. Laursen ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

Investigation of trapping states in a Nb‐doped rutile by admittance spectroscopy

1986 ◽  
Vol 60 (12) ◽  
pp. 4191-4196 ◽  
Author(s):  
K. Kobayashi ◽  
M. Takata ◽  
Y. Fujimura ◽  
S. Okamoto
Keyword(s):  
Admittance Spectroscopy

Thermal stability of a Si/Si1−xGex quantum well studied by admittance spectroscopy

2000 ◽  
Vol 87 (4) ◽  
pp. 1947-1950 ◽  
Author(s):  
Feng Lin ◽  
Da-wei Gong ◽  
Chi Sheng ◽  
Fang Lu ◽  
Xun Wang
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Admittance Spectroscopy ◽  
Thermal Stability Of

scholarly journals Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1581
Author(s):  
José C. Conesa
Keyword(s):  
Significant Problem ◽  
Band Offsets ◽  
Semiconductor Interfaces ◽  
Hartree Potential ◽  
Hybrid Functionals

Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at interfaces between two semiconductors, are analyzed in the present work. These methods are compared using several very different semiconductor pairs, and the conclusions about the advantages of each method are discussed. Overall, the alternating slabs method is recommended in those cases where epitaxial mismatch does not represent a significant problem.

Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions

Optik ◽  
2021 ◽  
Vol 231 ◽  
pp. 166506
Author(s):  
Najla M. Khusayfan ◽  
A.F. Qasrawi ◽  
Seham R. Alharbi ◽  
Hazem K. Khanfar ◽  
T.S. Kayed
Keyword(s):  
Dielectric Dispersion ◽  
Band Offsets
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