Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures

1999 ◽  
Vol 85 (2) ◽  
pp. 985-993 ◽  
Author(s):  
D. V. Singh ◽  
K. Rim ◽  
T. O. Mitchell ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Admittance Spectroscopy ◽  
Spectroscopy Analysis ◽  
Band Offsets

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

1987 ◽  
Vol 50 (12) ◽  
pp. 736-738 ◽  
Author(s):  
D. V. Lang ◽  
M. B. Panish ◽  
F. Capasso ◽  
J. Allam ◽  
R. A. Hamm ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

scholarly journals Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

2004 ◽  
Vol 241 (10) ◽  
pp. 2246-2252 ◽  
Author(s):  
S. Sayan ◽  
R. A. Bartynski ◽  
X. Zhao ◽  
E. P. Gusev ◽  
D. Vanderbilt ◽  
...  
Keyword(s):  
Conduction Band ◽  
Gate Stack ◽  
Band Offsets ◽  
Inverse Photoemission ◽  
Photoemission Study

Enhanced performance of CsPbBr3 perovskite solar cells by reducing the conduction band offsets via a Sr-modified TiO2 layer

2020 ◽  
Vol 529 ◽  
pp. 147119 ◽  
Author(s):  
Xiaobing Cao ◽  
Guoshuai Zhang ◽  
Yifan Cai ◽  
Long Jiang ◽  
Yan Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Perovskite Solar Cells ◽  
Tio2 Layer ◽  
Band Offsets

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

A Study of V3+/4+ Levels in Semi-insulating 6H-SiC using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies

2006 ◽  
Vol 911 ◽  
Author(s):  
Wonwoo Lee ◽  
Mary E Zvanut
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Charge State ◽  
Conduction Band ◽  
Epr Spectroscopy ◽  
Admittance Spectroscopy ◽  
Paramagnetic Resonance ◽  
Characteristic Spectrum ◽  
Epr Measurements ◽  
The Individual ◽  
Electron Paramagnetic

AbstractThe purpose of this study is to identify the vanadium acceptor levels in semi-insulating (SI) 6H-SiC using optical admittance spectroscopy (OAS) and electron paramagnetic resonance (EPR) spectroscopy. OAS conductance peaks near at 0.67 ± 0.02 eV and 0.70 ± 0.02 eV are identified as V3+/4+ levels at the quasi-cubic sites. An OAS peak at 0.87 eV is assigned to the same transition at the hexagonal site. EPR measurements before illumination revealed the characteristic spectrum of V3+. The presence of the V3+ signal supports the identification of the OAS peaks as transitions from the V3+/4+ level to the conduction band. Photo-induced EPR measurements reveal a change in the intensity of V3+ and V4+ at 0.8 ± 0.1 eV, where the amplitude of the V3+ charge state decreases and that of V4+ increases by approximately equal amounts. Although the individual sites are not resolved in the photo-induced EPR data, the 0.8 eV feature strongly supports the assignment of the three OAS peaks as acceptor levels.

Valence and conduction band offsets at low-k a-SiOxCy:H/a-SiCxNy:H interfaces

2014 ◽  
Vol 116 (11) ◽  
pp. 113703 ◽  
Author(s):  
Sean W. King ◽  
Justin Brockman ◽  
Marc French ◽  
Milt Jaehnig ◽  
Markus Kuhn ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Offsets ◽  
Low K
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