Admittance spectroscopy measurement of band offset in GaAs‐GaAlAs multiquantum well

1990 ◽  
Vol 68 (1) ◽  
pp. 116-119 ◽  
Author(s):  
X. Letartre ◽  
D. Stievenard ◽  
M. Lannoo ◽  
D. Lippens
Keyword(s):  
Band Offset ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement ◽  
Multiquantum Well

Single‐frequency admittance spectroscopy measurement of band offset in a Si/Si1−xGex/Si quantum well

1994 ◽  
Vol 75 (6) ◽  
pp. 2957-2962 ◽  
Author(s):  
Fang Lu ◽  
Jiayu Jiang ◽  
Henghui Sun ◽  
Dawei Gong ◽  
Xun Wang
Keyword(s):  
Quantum Well ◽  
Single Frequency ◽  
Band Offset ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

Admittance Spectroscopy and Thermal Stimulation Current for Band-Offset Characteristics in AlAs/GaAs n+-p Structures

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 227-230
Author(s):  
Jenn-Fang Chen ◽  
Jin-Shung Wang ◽  
Pai-Yong Wang ◽  
Nie-Chuan Chen ◽  
Nian-Ching Hsu
Keyword(s):  
Thermal Stimulation ◽  
Band Offset ◽  
Admittance Spectroscopy ◽  
Stimulation Current

Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

1989 ◽  
Vol 54 (8) ◽  
pp. 739-741 ◽  
Author(s):  
R. E. Cavicchi ◽  
D. V. Lang ◽  
D. Gershoni ◽  
A. M. Sergent ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Strained Layers ◽  
Band Offsets ◽  
Spectroscopy Measurement

Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Carlo Ghezzi ◽  
Renato Magnanini ◽  
Antonella Parisini ◽  
Luciano Tarricone ◽  
Enos Gombia ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Admittance Spectroscopy ◽  
Valence Band Offset

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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