Lattice mismatch and band offsets in strained layers

1986 ◽  
Vol 60 (8) ◽  
pp. 2893-2896 ◽  
Author(s):  
D. D. Coon ◽  
H. C. Liu
Keyword(s):  
Lattice Mismatch ◽  
Strained Layers ◽  
Band Offsets

Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III–V semiconductors

2021 ◽  
Vol 42 (11) ◽  
pp. 112102
Author(s):  
Yuying Hu ◽  
Chen Qiu ◽  
Tao Shen ◽  
Kaike Yang ◽  
Huixiong Deng
Keyword(s):  
Lattice Mismatch ◽  
Direct Method ◽  
Large Strain ◽  
Current Method ◽  
Band Offset ◽  
Light Sources ◽  
Type I ◽  
Band Offsets ◽  
Large Lattice ◽  
Silicon Based

Abstract Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to apply directly to the large-lattice-mismatched and heterovalent semiconductors because of the existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and the insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III–V systems as examples, the results have the same accuracy as what is a widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III–V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.

CBED Investigations of Mesoscopic Semiconductor Structures

1999 ◽  
Vol 5 (S2) ◽  
pp. 208-209
Author(s):  
H. Lakner ◽  
F. Schulze-Kraasch ◽  
C. Mendorf ◽  
G. Brockt
Keyword(s):  
High Speed ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Local Strain ◽  
Tetragonal Distortion ◽  
Strained Layers ◽  
Spatially Resolved ◽  
Relaxation Effects ◽  
Convergent Beam ◽  
Induced Defects

Ternary and quaternary heterostructures from III-V-semiconductors get more and more importance in the fabrication of high-speed/high frequency devices in telecommunication systems. One of the key parameters for the performance of such devices is the crystalline quality and especially the amount of tetragonal distortion in strained layers on a nanometer scale. Strain can cause problems for the growth of such layers like relaxation induced defects, especially for the case of a high value of lattice mismatch. However, strain and the associated influence on the band structure can be used consciously for the design of tailor-made heterostructures (band gap engineering). Therefore, the spatially resolved investigation of local crystal properties (tetragonal distortion or strain and strain relaxation) is a key tool for the characterization of strained layers.Convergent beam electron diffraction (CBED) patterns and convergent beam imaging (CBIM) can be used to evaluate informations on the local crystalline structure. E.g. the position of the High Order Laue Zone (HOLZ) lines in the CBED patterns is sensitive to the local strain and therefore can be used to determine strain and relaxation effects in heterostructures quantitatively. But in practice the applicability of CBED is often limited by a lack of ultimate spatial resolution and/or of sensitivity.

The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers.

1991 ◽  
Vol 239 ◽  
Author(s):  
R. Hull ◽  
J. C. Bean ◽  
F. Ross ◽  
D. Bahnck ◽  
L. J. Pencolas
Keyword(s):  
Misfit Dislocation ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Misfit Dislocations ◽  
Slip Systems ◽  
Strained Layers ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Strain Stress ◽  
Kinetics Of

ABSTRACTThe geometries, microstructures, energetics and kinetics of misfit dislocations as functions of surface orientation and the magnitude of strain/stress are investigated experimentally and theoretically. Examples are drawn from (100), (110) and (111) surfaces and from the GexSi1–x/Si and InxGa1–x/GaAs systems. It is shown that the misfit dislocation geometries and microstructures at lattice mismatch stresses < - 1GPa may in general be predicted by operation of the minimum magnitude Burgers vector slipping on the widest spaced planes. At stresses of the order several GPa, however, new dislocation systems may become operative with either modified Burgers vectors or slip systems. Dissociation of totál misfit dislocations into partial dislocations is found to play a crucial role in strain relaxation, on surfaces other than (100) under compressive stress.

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
Weidan Li ◽  
Anthony P. Taylor ◽  
Leo J. Schowalter
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Strained Layers ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Ion Channeling ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Relationship Of ◽  
First Time

ABSTRACTMolecular beam epitaxial (MBE) growth condition of SrF2 directly on Si(111) substrates has been optimized in terms of both Xmin and the surface morphology. Lattice distortion measurements were carried out with ion channeling along off-normal channeling directions in the strained layers grown at the optimal condition. The relationship of residual strain vs. film thickness for SrF2 on Si(111) was provided by the first time. The experimental data demonstrated a special thickness in this relation, at which the derivative of strain vs. film thickness changes its sign. This unique behavior was understood as the result of competition between the large lattice mismatch and the large thermal mismatch between SrF2 and Si.

Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

1989 ◽  
Vol 54 (8) ◽  
pp. 739-741 ◽  
Author(s):  
R. E. Cavicchi ◽  
D. V. Lang ◽  
D. Gershoni ◽  
A. M. Sergent ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Strained Layers ◽  
Band Offsets ◽  
Spectroscopy Measurement

scholarly journals Offsets and Polarization at Strained AlN/GaN Polar Interfaces

1996 ◽  
Vol 449 ◽  
Author(s):  
Fabio Bernardini ◽  
Vincenzo Fiorentini ◽  
David Vanderbilt
Keyword(s):  
Valence Band ◽  
Geometric Structure ◽  
First Principles ◽  
Lattice Mismatch ◽  
First Principles Calculation ◽  
Band Offsets ◽  
Piezoelectric Fields ◽  
Formation Energies

ABSTRACTThe strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies. Our results confirm the existence of a large forward-backward asymmetry for this interface.

Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of long wave-length infrared (LWIR) detectors

1992 ◽  
Vol 19 (1-4) ◽  
pp. 439-442 ◽  
Author(s):  
S.C. Jain ◽  
J. Poortmans ◽  
J. Nijs ◽  
P. Van Mieghem ◽  
R.P. Mertens ◽  
...  
Keyword(s):  
Wave Length ◽  
Strained Layers ◽  
Band Offsets ◽  
Long Wave ◽  
Heavily Doped ◽  
P Type

Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices

1988 ◽  
Vol 38 (11) ◽  
pp. 7740-7748 ◽  
Author(s):  
H. Mathieu ◽  
J. Allegre ◽  
A. Chatt ◽  
P. Lefebvre ◽  
J. P. Faurie
Keyword(s):  
Lattice Mismatch ◽  
Band Offsets ◽  
Strained Layer

Atomistic Calculation of Stability and Metastability of Coherently Strained Silicon-Like Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
Brian W. Dodson ◽  
Paul A. Taylor
Keyword(s):  
Lattice Mismatch ◽  
Continuum Theory ◽  
Stability Limit ◽  
Test System ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Empirical Potentials ◽  
The Stability ◽  
Three Body ◽  
Microscopic Techniques

ABSTRACTMonte Carlo based microscopic techniques were used to study the stability and metastability of thin coherently strained layers of mismatched siliconlike semiconductor material grown on the (111) silicon surface. The structural energy was calculated using three-body empirical potentials. For layers greater than about 20 Å thickness, the critical layer thickness associated with thermodynamic stability agrees quantitatively with continuum theory. For thinner layers, however, considerable variations from the continuum theory are found. For a strained layer six monolayers thick, the test system is found to be metastable against the nucleation of misfit dislocations to a lattice mismatch of about 11%, compared to the 4% equilibrium stability limit.

Critical Thickness for Strained Quantum Wires

1995 ◽  
Vol 379 ◽  
Author(s):  
T. J. Gosling ◽  
L. B. Freund
Keyword(s):  
Finite Element ◽  
Critical Thickness ◽  
Quantum Wires ◽  
Lattice Mismatch ◽  
Threading Dislocations ◽  
Element Analysis ◽  
Strained Layers ◽  
Strained Layer ◽  
The Finite Element Analysis ◽  
The Stability

ABSTRACTThe stability of strained quantum wires against the propagation of threading dislocations is considered, using a critical thickness criterion due to Matthews and Blakeslee that is extensively used for strained layers. Given first are results for the critical mismatch at which a buried wire of a given thickness becomes susceptible to degradation. It is found that a wire, once buried, is extremely stable, being able to support, without loss of coherency, around five times the lattice mismatch that can be supported by a buried strained layer of the same thickness. It is concluded that if a strained wire contains dislocations then those dislocations must have been introduced during its growth, when the top surface of the wire is exposed. To investigate this, the results of finite element calculations are presented that give the critical relationship between mismatch and thickness during the growth of a triangular quantum wire being deposited in a [110]-oriented V-groove in a patterned (001) substrate. The results may be approximately expressed through an expression of the same form as that derived by Matthews and Blakeslee for a strained layer, but with modified coefficients obtained via the finite element analysis. Contact is made with the limited experimental evidence available.

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