Epitaxial growth of yttria‐stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

1988 ◽  
Vol 53 (16) ◽  
pp. 1506-1508 ◽  
Author(s):  
P. Legagneux ◽  
G. Garry ◽  
D. Dieumegard ◽  
C. Schwebel ◽  
C. Pellet ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Sputter Deposition ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ion Beam Sputter Deposition ◽  
Zirconia Films

Fabrication of Biaxially Oriented YBCO on (00l) Biaxially Oriented Yttria-Stabilized-Zirconia on Polycrystalline Substrates

1994 ◽  
Vol 341 ◽  
Author(s):  
Paul Arendt ◽  
Steve Foltyn ◽  
Xin Di Wu ◽  
John Townsend ◽  
Chris Adams ◽  
...  
Keyword(s):  
Ybco Film ◽  
Ion Beam ◽  
Density Measurement ◽  
Barium Copper Oxide ◽  
Yttria Stabilized Zirconia ◽  
Transport Critical Current Density ◽  
Stabilized Zirconia ◽  
Barium Copper ◽  
Yttrium Barium ◽  
Ion Beam Sputter Deposition

AbstractIon-assisted, ion-beam sputter deposition is used to obtain (00l) biaxially oriented films of cubic yttria-stabilized-zirconia (YSZ) on polycrystalline metal substrates. Yttrium-barium-copper-oxide (YBCO) is then heteroepitaxially-pulse-laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14° and 10° respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/cm2 at 75K and 0T. At 75K, the total dc transport current in a 1 cm wide YBCO film is 23 A.

Epitaxial growth of single-crystal Si1−xGex on Si(100) by ion beam sputter deposition

1990 ◽  
Vol 184 (1-2) ◽  
pp. 117-123 ◽  
Author(s):  
F. Meyer ◽  
C. Schwebel ◽  
C. Pellet ◽  
G. Gautherin ◽  
A. Buxbaum ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition
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