Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition

1986 ◽  
Vol 4 (5) ◽  
pp. 1153 ◽  
Author(s):  
C. Schwebel
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Ion beam sputter deposition of layered magnetic thin films

1983 ◽  
Vol 35 (1-3) ◽  
pp. 89-92 ◽  
Author(s):  
J.W. Smits ◽  
H.A. Algra ◽  
U. Enz ◽  
R.P. van Stapele
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Thin Films ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Processing-structure relations for ferroelectric thin films deposited by ion beam sputter deposition

1991 ◽  
Vol 116 (1) ◽  
pp. 35-49 ◽  
Author(s):  
Angus Kingon ◽  
Michael Ameen ◽  
Orlando Auciello ◽  
Kenneth Gifford ◽  
Husam Al-Shareef ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ferroelectric Thin Films ◽  
Ion Beam Sputter Deposition

Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition

2015 ◽  
Vol 283 ◽  
pp. 241-246 ◽  
Author(s):  
Wei Mao ◽  
Masaya Fujita ◽  
Takumi Chikada ◽  
Kenji Yamaguchi ◽  
Akihiro Suzuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

2010 ◽  
Vol 518 (23) ◽  
pp. 6891-6896 ◽  
Author(s):  
S. Venkatachalam ◽  
Hiroshi Nanjo ◽  
Fathy M.B. Hassan ◽  
Kazunori Kawasaki ◽  
Mitsuhiro Kanakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Deposition Method ◽  
Oxide Thin Films ◽  
Ion Beam Sputter Deposition

X-ray photoelectron and X-ray absorption spectroscopic study on β-FeSi2 thin films fabricated by ion beam sputter deposition

2010 ◽  
Vol 256 (10) ◽  
pp. 3155-3159 ◽  
Author(s):  
F. Esaka ◽  
H. Yamamoto ◽  
N. Matsubayashi ◽  
Y. Yamada ◽  
M. Sasase ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Ion Beam ◽  
Sputter Deposition ◽  
X Ray ◽  
X Ray Absorption ◽  
Ion Beam Sputter Deposition

Electrical resistivity of RuOx thin films prepared by ion beam sputter deposition

1993 ◽  
Vol 65-66 ◽  
pp. 293-297 ◽  
Author(s):  
H. Kezuka ◽  
R. Egerton ◽  
M. Masui ◽  
T. Wada ◽  
T. Ikehata ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Variation of the deposition rate during ion beam sputter deposition of optical thin films

2005 ◽  
Vol 484 (1-2) ◽  
pp. 170-173 ◽  
Author(s):  
Hongxiang Liu ◽  
Shengming Xiong ◽  
Linghui Li ◽  
Yundong Zhang
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

scholarly journals Computer Simulation of Scattered Ion and Sputtered Species Effects in Ion Beam Sputter-Deposition of High Temperature Superconducting Thin Films

1992 ◽  
Vol 268 ◽  
Author(s):  
Alan R. Krauss ◽  
Orlando Auclello
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Primary Beam ◽  
Angle Of Incidence ◽  
Ion Beam Sputtering ◽  
High Temperature Superconducting ◽  
Target Composition ◽  
Ion Beam Sputter Deposition

ABSTRACTIon beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering may lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar+, Kr+ and Xe+ incident on Ba and Cu targets at 0° and 45° with respect to the surface normal, with the substrate positioned at 0° and 45°. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude.

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