scholarly journals MATERIALS FOR IR TUNABLE LASER APPLICATIONS AND NON RADIATIVE DECAY PROCESSES

1987 ◽  
Vol 48 (C7) ◽  
pp. C7-451-C7-454
Author(s):  
F. AUZEL ◽  
J. M. BRETEAU
Keyword(s):  
Radiative Decay ◽  
Tunable Laser ◽  
Laser Applications

Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications

2021 ◽  
pp. 1-1
Author(s):  
Paul Verrinder ◽  
Lei Wang ◽  
Joseph Fridlander ◽  
Fengqiao Sang ◽  
Victoria Rosborough ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuit ◽  
Tunable Laser ◽  
Laser Applications ◽  
Photonic Integrated Circuit

scholarly journals Laser cooling of ytterbium-doped silica glass

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Esmaeil Mobini ◽  
Saeid Rostami ◽  
Mostafa Peysokhan ◽  
Alexander Albrecht ◽  
Stefan Kuhn ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Laser Cooling ◽  
Silica Glass ◽  
Radiative Decay ◽  
Laser Wavelength ◽  
Solid State Laser ◽  
Cooling Efficiency ◽  
Laser Applications ◽  
Anti Stokes ◽  
Rare Earth Doped

Abstract Laser cooling of a solid is achieved when a coherent laser illuminates the material in the red tail of its absorption spectrum, and the heat is carried out by anti-Stokes fluorescence of the blue-shifted photons. Solid-state laser cooling has been successfully demonstrated in several materials, including rare-earth-doped crystals and glasses. Here we show the net cooling of high-purity Yb-doped silica glass samples that are fabricated with low impurities to reduce their parasitic background loss for fiber laser applications. The non-radiative decay rate of the excited state in Yb ions is very small in these glasses due to the low level of impurities, resulting in near-unity quantum efficiency. We report the measurement of the cooling efficiency as a function of the laser wavelength, from which the quantum efficiency of the Yb-doped silica is calculated.

A virtual pivot point MEMS rotary comb actuator for tunable laser applications

2012 ◽  
Author(s):  
T. M. F. Amin ◽  
M. Q. Huda ◽  
Y. Ning ◽  
G. McKinnon ◽  
J. Tulip ◽  
...  
Keyword(s):  
Tunable Laser ◽  
Laser Applications ◽  
Pivot Point

Optical properties of β-Ga2O3:Cr3+ single crystals for tunable laser applications

1987 ◽  
Vol 39 (1) ◽  
pp. 29-33 ◽  
Author(s):  
D. Vivien ◽  
B. Viana ◽  
A. Revcolevschi ◽  
J.D. Barrie ◽  
B. Dunn ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Tunable Laser ◽  
Laser Applications

scholarly journals Crystal field engineering of transition metal doped II-VI ternary and quaternary semiconductors for mid-IR tunable laser applications

2015 ◽  
Vol 5 (9) ◽  
pp. 2036 ◽  
Author(s):  
A.D. Martinez ◽  
D.V. Martyshkin ◽  
R.P. Camata ◽  
V.V. Fedorov ◽  
S.B. Mirov
Keyword(s):  
Transition Metal ◽  
Crystal Field ◽  
Tunable Laser ◽  
Laser Applications ◽  
Metal Doped

Growth of Erbium Doped PbF2 - SrF2 Epitaxial Layers on GaAs(111)B for Upconversion Waveguide Laser Applications

1993 ◽  
Vol 329 ◽  
Author(s):  
M. Lui ◽  
R. A. McFarlane ◽  
D. Yap
Keyword(s):  
Radiative Decay ◽  
Upconversion Luminescence ◽  
Growth Conditions ◽  
Pump Light ◽  
Semiconductor Wafer ◽  
Laser Applications ◽  
High Pump Power ◽  
Erbium Doped ◽  
Channel Waveguides ◽  
High Pump

AbstractWaveguide structures offer the possibility of making an upconversion laser operating at room temperature. By reducing the optical mode cross section can lead to a very high pump power density which allows modest pumping powers to overcome non-radiative decay processes. We have reported earlier on the observation of upconversion luminescence from both planar and channel waveguides of Erbium doped ZnF2 on MgF2(001) and Erbium doped PbF2 on GaAs(100). The epitaxial fluoride layers were all grown by Molecular Beam Epitaxy. Fluoride films preferentially grow on the (111) GaAs surface. In order to exploit this fact, we have grown Erbium doped PbF2 on GaAs(111)B with an intervening SrF2 cladding layer. The SrF2 and PbF2 growth conditions have been optimized on GaAs(111)B using X-ray rocking curve analysis. The crystalline quality of the films grown on GaAs(111)B are far superior to those grown on GaAs(100). Upconversion luminescence has been observed in the PbF2: Er/SrF2/GaAs(111)B planar waveguide structures. The guide ends were formed by cleaving the semiconductor wafer and the 800nm and 980nm pump light was introduced from a Ti-Sapphire laser by end pumping using a microscope objective.

Nano Wiggler for Wide-range Tunable Laser Applications

2012 ◽  
Author(s):  
Jed Khoury ◽  
Shivashankar Vangala ◽  
Andrew Davis ◽  
John Kiersted ◽  
Dennis Walker
Keyword(s):  
Tunable Laser ◽  
Laser Applications ◽  
Wide Range
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