Nano Wiggler for Wide-range Tunable Laser Applications

Author(s):  
Jed Khoury ◽  
Shivashankar Vangala ◽  
Andrew Davis ◽  
John Kiersted ◽  
Dennis Walker
Author(s):  
Paul Verrinder ◽  
Lei Wang ◽  
Joseph Fridlander ◽  
Fengqiao Sang ◽  
Victoria Rosborough ◽  
...  

2012 ◽  
Author(s):  
T. M. F. Amin ◽  
M. Q. Huda ◽  
Y. Ning ◽  
G. McKinnon ◽  
J. Tulip ◽  
...  

1987 ◽  
Vol 39 (1) ◽  
pp. 29-33 ◽  
Author(s):  
D. Vivien ◽  
B. Viana ◽  
A. Revcolevschi ◽  
J.D. Barrie ◽  
B. Dunn ◽  
...  

2015 ◽  
Vol 5 (9) ◽  
pp. 2036 ◽  
Author(s):  
A.D. Martinez ◽  
D.V. Martyshkin ◽  
R.P. Camata ◽  
V.V. Fedorov ◽  
S.B. Mirov

2016 ◽  
Vol 23 (4) ◽  
pp. 887-900 ◽  
Author(s):  
Nelson de Oliveira ◽  
Denis Joyeux ◽  
Mourad Roudjane ◽  
Jean-François Gil ◽  
Bertrand Pilette ◽  
...  

A VUV absorption spectroscopy facility designed for ultra-high spectral resolution is in operation as a dedicated branch on the DESIRS beamline at Synchrotron SOLEIL. This branch includes a unique VUV Fourier transform spectrometer (FTS) and a dedicated versatile gas sample chamber. The FTS instrument can cover a large UV–VUV spectral range from 4 to 30 eV, with an ultimate line width of 0.08 cm−1on a large spectral window, ΔE/E= 7%, over which all spectral features can be acquired in a multiplex way. The performance can be considered to be a middle ground between broadband moderate-resolution spectrometers based on gratings and ultra-high-spectral-resolution VUV tunable-laser-based techniques over very narrow spectral windows. The various available gaseous-sample-handling setups, which function over a wide range of pressures and temperatures, and the acquisition methodology are described. A selection of experimental results illustrates the performance and limitations of the FTS-based facility.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
T. Z. Kosc ◽  
A. A. Kozlov ◽  
S. Papernov ◽  
K. R. P. Kafka ◽  
K. L. Marshall ◽  
...  

Abstract We investigate the damage resistance of saturated and unsaturated liquid crystals (LC’s) under a wide range of laser excitation conditions, including 1053-nm pulse durations between 600 fs and 1.5 ns and nanosecond pulse excitation at 351 nm and 532 nm. This study explores the relationship between the LC’s resistance to laser-induced breakdown (damage) and the electronic structure (π-electron delocalization) of the constituent molecules. The laser-induced damage threshold at all wavelengths and pulse durations was consistently higher in saturated materials than in their unsaturated counterparts. The wavelength’s dependence in the results suggests that the energy coupling process that leads to laser-induced breakdown is governed by the energy separation between the ground state and the first and second excited states, while the pulse duration’s dependence in the results reveals the important role of electron relaxation between the excited states. A qualitative description was developed to interpret the experimental observations.


2008 ◽  
Vol 1111 ◽  
Author(s):  
Nate Woodward ◽  
Naveen Jha ◽  
Eric Readinger ◽  
Grace Metcalfe ◽  
Michael Wraback ◽  
...  

AbstractDue to its favorable electronic and thermal properties GaN has been considered as a rare-earth host material for solid state amplifier and laser applications. To this end, we performed spatially resolved combined excitation emission spectroscopy (CEES) on Nd ions which were in-situ-doped into GaN epitaxial films grown by plasma assisted molecular beam epitaxy (PA-MBE) on c-plane sapphire substrate. For a wide range of concentration (up to 8at%) we find in the emission a dominant incorporation site, which can be identified with good certainty as a substitutional ‘Ga’ site. Energy levels and electron-phonon coupling to a localized mode can be identified. For the majority site, confocal spectral imaging under selective excitation show changes in emission intensity, excitation and emission wavelength on a submicron length scale suggesting spatial inhomogeneities in terms of Nd3+ ion concentration.


MRS Bulletin ◽  
1998 ◽  
Vol 23 (7) ◽  
pp. 28-36 ◽  
Author(s):  
Gary C. Catella ◽  
David Burlage

Silver gallium sulfide (AgGaS2), silver gallium selenide (AgGaSe2), and silver gallium indium selenide (AgGaxIn(1 − x)Se2) are unique nonlinear crystals suitable for a wide range of three-wave mixing applications. They combine strong nonlinear coupling with phase matching across a wide (0.5 − 12.5 μm) transmission range. These properties provide the basis for CO2 laser harmonic-generator (HG), visible (VIS), and near-infrared (NIR) pumped opticalparametric-oscillator (OPO) and sumand difference-frequency-generator (SFG/DFG) systems for producing tunable laser radiation from approximately 0.65 to 12 μm. A wide range of pump lasers is now available, including diode lasers capable of direct pumping of AgGaS2 and efficient diode-pumped lasers for pumping any of these crystals. Significant progress in material characteristics and nonlinear optical (NLO) performance has been accomplished. Bulk absorption for production-quality AgGaS2 is ~0.01 − 0.02 cm across the 0.8−9-μm region. Exceptional crystals of AgGaS2 have absorption <0.0005 cm−1 at 1.064 μm, and even at 0.633 μm, absorption is ~0.015 cm−1. Figure 1 illustrates the late 1980s vintage and present transmission of AgGaS2. For AgGaSe2, absorption for production material ranges from 0.010 cm to 0.018 cm−1 from 1 μm to 11 μm. Certain crystals can have 0.007−0.008 cm−1 absorption at 10.6 μm. The NIR transmission curves for AgGaSe2 and AgGaxIn(1 − x)Se2 appear in Figure 2. This combination of optical properties, along with their good physical characteristics, make these two crystals versatile for NLO applications spanning the VIS to the infrared (ir).


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