Growth of Erbium Doped PbF2 - SrF2 Epitaxial Layers on GaAs(111)B for Upconversion Waveguide Laser Applications

1993 ◽  
Vol 329 ◽  
Author(s):  
M. Lui ◽  
R. A. McFarlane ◽  
D. Yap
Keyword(s):  
Radiative Decay ◽  
Upconversion Luminescence ◽  
Growth Conditions ◽  
Pump Light ◽  
Semiconductor Wafer ◽  
Laser Applications ◽  
High Pump Power ◽  
Erbium Doped ◽  
Channel Waveguides ◽  
High Pump

AbstractWaveguide structures offer the possibility of making an upconversion laser operating at room temperature. By reducing the optical mode cross section can lead to a very high pump power density which allows modest pumping powers to overcome non-radiative decay processes. We have reported earlier on the observation of upconversion luminescence from both planar and channel waveguides of Erbium doped ZnF2 on MgF2(001) and Erbium doped PbF2 on GaAs(100). The epitaxial fluoride layers were all grown by Molecular Beam Epitaxy. Fluoride films preferentially grow on the (111) GaAs surface. In order to exploit this fact, we have grown Erbium doped PbF2 on GaAs(111)B with an intervening SrF2 cladding layer. The SrF2 and PbF2 growth conditions have been optimized on GaAs(111)B using X-ray rocking curve analysis. The crystalline quality of the films grown on GaAs(111)B are far superior to those grown on GaAs(100). Upconversion luminescence has been observed in the PbF2: Er/SrF2/GaAs(111)B planar waveguide structures. The guide ends were formed by cleaving the semiconductor wafer and the 800nm and 980nm pump light was introduced from a Ti-Sapphire laser by end pumping using a microscope objective.

Design of EDFA based 16 channel WDM system using counter directional high pump power

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Md. Asraful Sekh ◽  
Mijanur Rahim ◽  
Anjumanara Begam
Keyword(s):  
Pump Power ◽  
Wavelength Division Multiplexing ◽  
Input Power ◽  
Low Noise ◽  
Fiber Amplifiers ◽  
Wavelength Division ◽  
High Pump Power ◽  
Erbium Doped ◽  
High Pump ◽  
Channel Wavelength

Abstract In this paper, design of erbium-doped fiber amplifiers (EDFA) based 16 channel wavelength-division multiplexing (WDM) system for different pump powers and input signal levels using counter propagating pumping scheme is reported. Wavelength range between 1548 and 1560 nm in C-band with channel spacing of 0.75 nm at a bit rate of 10 Gbps are used. Input power given to all the channels is taken between −20 and −35 dBm with 3 dBm variation. Pump power levels between 100 and 500 mW at 980 nm wavelength are used. Low gain flatness with high gains and low noise figures are achieved with the proposed scheme.

Strain and Temperature Discrimination Using High-Birefringence Erbium-Doped Fiber Loop Mirror With High Pump Power Laser

2008 ◽  
Vol 20 (12) ◽  
pp. 1033-1035 ◽  
Author(s):  
Orlando Frazao ◽  
Diogo Egypto ◽  
Lucas Aragao-Bittencourt ◽  
Maria T. M. R. Giraldi ◽  
Manuel B. Marques
Keyword(s):  
Pump Power ◽  
Power Laser ◽  
High Birefringence ◽  
High Pump Power ◽  
Erbium Doped ◽  
High Pump ◽  
Fiber Loop Mirror ◽  
Loop Mirror ◽  
Fiber Loop

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

NON-DEMOLITIVE PHOTON NUMBER MEASUREMENT VIA χ(2) NONLINEARITY

1999 ◽  
Vol 13 (28) ◽  
pp. 3383-3392 ◽  
Author(s):  
STEFANIA CASTELLETTO ◽  
IVO PIETRO DEGIOVANNI ◽  
MARIA LUISA RASTELLO
Keyword(s):  
Pump Power ◽  
Beam Splitter ◽  
Nonlinear Crystal ◽  
Photon Number ◽  
High Accuracy ◽  
Relative Uncertainty ◽  
Theoretical Evaluation ◽  
High Pump Power ◽  
Coherent Field ◽  
High Pump

The aim of this paper is to present a possible experiment for measuring photon number by a non-demolitive scheme. We show that, in principle, it is possible to deduce the number of photons of an intense pump coherent field by measuring the phase-shift on two frequency conjugated beams due to the interaction with the pump in a nonlinear crystal, which exhibits χ(2) nonlinearity. We perform a theoretical evaluation of the relative uncertainty associated to the photon number measurement, obtaining high accuracy results when high pump power levels, low coupling between pump and crystal and squeezing generators are used. The accuracy obtained are compared with results obtainable with a beam splitter setup.

Propagation losses and gain measurements in erbium-doped fluoride glass channel waveguides by use of a double-pass technique

2005 ◽  
Vol 44 (22) ◽  
pp. 4678 ◽  
Author(s):  
Ion Vasilief ◽  
Stéphan Guy ◽  
Bernard Jacquier ◽  
Brigitte Boulard ◽  
You Ping Gao ◽  
...  
Keyword(s):  
Fluoride Glass ◽  
Double Pass ◽  
Erbium Doped ◽  
Propagation Losses ◽  
Channel Waveguides

scholarly journals Laser cooling of ytterbium-doped silica glass

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Esmaeil Mobini ◽  
Saeid Rostami ◽  
Mostafa Peysokhan ◽  
Alexander Albrecht ◽  
Stefan Kuhn ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Laser Cooling ◽  
Silica Glass ◽  
Radiative Decay ◽  
Laser Wavelength ◽  
Solid State Laser ◽  
Cooling Efficiency ◽  
Laser Applications ◽  
Anti Stokes ◽  
Rare Earth Doped

Abstract Laser cooling of a solid is achieved when a coherent laser illuminates the material in the red tail of its absorption spectrum, and the heat is carried out by anti-Stokes fluorescence of the blue-shifted photons. Solid-state laser cooling has been successfully demonstrated in several materials, including rare-earth-doped crystals and glasses. Here we show the net cooling of high-purity Yb-doped silica glass samples that are fabricated with low impurities to reduce their parasitic background loss for fiber laser applications. The non-radiative decay rate of the excited state in Yb ions is very small in these glasses due to the low level of impurities, resulting in near-unity quantum efficiency. We report the measurement of the cooling efficiency as a function of the laser wavelength, from which the quantum efficiency of the Yb-doped silica is calculated.

Sol-gel erbium-doped silica-hafnia planar and channel waveguides

2003 ◽  
Author(s):  
Rogeria R. Goncalves ◽  
Giovanni Carturan ◽  
Luca Zampedri ◽  
Maurizio Ferrari ◽  
Cristina Armellini ◽  
...  
Keyword(s):  
Sol Gel ◽  
Erbium Doped ◽  
Channel Waveguides

Properties and Growth of MBE Grown Erbium Doped Gallium Arsenide Co-Doped with Selenium

1996 ◽  
Vol 422 ◽  
Author(s):  
P. Rutter ◽  
K. E. Singer ◽  
A. R. Peaker ◽  
A. C. Wright
Keyword(s):  
Electron Concentration ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Deep Levels ◽  
Spherical Particles ◽  
Electrical Measurements ◽  
Erbium Doping ◽  
Measured Concentration ◽  
Erbium Doped ◽  
Co Doped

AbstractThe growth of erbium doped GaAs by molecular beam epitaxy (MBE) can, depending on growth conditions, result in the precipitation of small spherical particles of erbium arsenide. It has been observed that by reducing the V:III (As:Ga) flux ratio to close to stoichiometry wirelike precipitates roughly aligned in the direction of growth are produced. The concentration of erbium incorporated into the GaAs lattice for a constant erbium flux is also affected by the As:Ga flux ratio with an increase in erbium doping being observed with decreasing As:Ga flux ratio.Electrical measurements have been performed on erbium doped GaAs samples co-doped with selenium, an n-type dopant. Measurements have revealed that when erbium is present, the electron concentration is reduced by an amount approximately equal to 70% of the erbium concentration. DLTS measurements have shown that although large concentrations of deep levels are present in erbium doped material, the measured concentration of these deep levels is not high enough to account for the observed reduction in electron concentration with erbium doping.

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