SILICON MODULATION DOPING STRUCTURES USING MULTI-STEP MOLECULAR BEAM EPITAXY AND ION IMPLANTATION

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-173-C5-173
Author(s):  
T. de Jong ◽  
W. A.S. Douma ◽  
F. W. Saris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Modulation Doping

Modulation doping structures in silicon by molecular beam epitaxy and off-line ion implantation

1983 ◽  
Vol 1 (5-6) ◽  
pp. 157-162 ◽  
Author(s):  
T. De Jong ◽  
W.A.S. Douma ◽  
S. Doorn ◽  
F.W. Saris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Modulation Doping

Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (3) ◽  
pp. 035201 ◽  
Author(s):  
Giuliana Impellizzeri ◽  
Lucia Romano ◽  
Lorenzo Bosco ◽  
Corrado Spinella ◽  
Maria Grazia Grimaldi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy

2008 ◽  
Vol 51 (10) ◽  
pp. 1001-1015 ◽  
Author(s):  
A. V. Voitsekhovskii ◽  
D. V. Grigor’ev ◽  
N. Kh. Talipov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Intrinsic N-Type Modulation Doping in Inp-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
W.M. Chen ◽  
I.A. Buyanova ◽  
A. Buyanov ◽  
W.G. Bi ◽  
C.W. Tu
Keyword(s):  
Electron Transfer ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Electron Gas ◽  
Shallow Donor ◽  
Modulation Doping ◽  
Gas Source ◽  
Shubnikov De Haas Oscillations ◽  
Lt Inp

AbstractWe propose and demonstrate a new doping approach, i.e. intrinsic doping, for n-type modulation doping in InP-based heterostructures. Instead of the conventional method of n-type doping by shallow donor impurities, grown-in intrinsic defects are utilized to provide the required doping without external doping sources. The success of this approach is clearly demonstrated by our results from InGaAs/InP heterostructures, where the required n-type doping in the InP barriers is provided by Pin antisites, preferably introduced during off-stoichiometric growth of InP at low temperatures (LT-InP) by gas source molecular beam epitaxy. A twodimensional electron gas (2DEG) is shown to be formed near the InGaAs/InP heterointerface as a result of electron transfer from the LT-InP to the InGaAs active layer, from studies of Shubnikov-de Haas oscillations and photoluminescence. The concentration of the 2DEG is determined to be as high as 1.15×1012 cm−2, where two subbands of the 2DEG are readily occupied.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Er‐related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy

1995 ◽  
Vol 77 (8) ◽  
pp. 3919-3926 ◽  
Author(s):  
D. W. Elsaesser ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
K. R. Evans ◽  
F. L. Pedrotti
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Deep Centers

Photoluminescence of Mg‐doped GaAs grown by molecular beam epitaxy using Mg3As2as a Mg source: A comparison with Mg+ion implantation

1986 ◽  
Vol 49 (18) ◽  
pp. 1184-1186 ◽  
Author(s):  
Yunosuke Makita ◽  
Yoshinori Takeuchi ◽  
Nobukazu Ohnishi ◽  
Toshio Nomura ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Mg Doped
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