Er‐related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy

1995 ◽  
Vol 77 (8) ◽  
pp. 3919-3926 ◽  
Author(s):  
D. W. Elsaesser ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
K. R. Evans ◽  
F. L. Pedrotti
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Deep Centers

Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (3) ◽  
pp. 035201 ◽  
Author(s):  
Giuliana Impellizzeri ◽  
Lucia Romano ◽  
Lorenzo Bosco ◽  
Corrado Spinella ◽  
Maria Grazia Grimaldi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy

2008 ◽  
Vol 51 (10) ◽  
pp. 1001-1015 ◽  
Author(s):  
A. V. Voitsekhovskii ◽  
D. V. Grigor’ev ◽  
N. Kh. Talipov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

1996 ◽  
Vol 169 (4) ◽  
pp. 637-642 ◽  
Author(s):  
Liwu Lu ◽  
Songlin Feng ◽  
Jiben Liang ◽  
Zhanguo Wang ◽  
J. Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hydrogen Treatment ◽  
Deep Centers

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Photoluminescence of Mg‐doped GaAs grown by molecular beam epitaxy using Mg3As2as a Mg source: A comparison with Mg+ion implantation

1986 ◽  
Vol 49 (18) ◽  
pp. 1184-1186 ◽  
Author(s):  
Yunosuke Makita ◽  
Yoshinori Takeuchi ◽  
Nobukazu Ohnishi ◽  
Toshio Nomura ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Mg Doped

scholarly journals Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 943-949 ◽  
Author(s):  
Z-Q. Fang ◽  
D. C. Look ◽  
Wook Kim ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Strong Electric Field ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Electric Field Effects ◽  
Deep Centers ◽  
Si Doped ◽  
Transient Spectroscopy

Deep centers in Si-doped n-GaN samples grown on sapphire by reactive molecular beam epitaxy, using different ammonia flow rates (AFRs), have been studied by deep level transient spectroscopy. In addition to five electron traps, which were also found in n-GaN layers grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy, two new centers C1 (0.43-0.48 eV) and E1 (0.25 eV) have been observed. C1, whose parameters show strong electric-field effects and anomalous electron capture kinetics, might be associated with dislocations. E1, which is very dependent on the AFR, exhibits an activation energy close to that of a center created by electron irradiation and is believed to be a defect complex involving VN.

Sign in / Sign up

Export Citation Format

Share Document